- 专利标题： SELF-TOPCOATING RESIST FOR PHOTOLITHOGRAPHY
- 专利标题（中）： 自拍贴图
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申请号： US11380731申请日： 2006-04-28
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公开(公告)号： US20070254235A1公开(公告)日： 2007-11-01
- 发明人: ROBERT ALLEN , PHILLIP BROCK , CARL LARSON , DANIEL SANDERS , RATNAM SOORIYAKUMARAN , LINDA SUNDBERG , HOA TRUONG , GREGORY WALLRAFF
- 申请人： ROBERT ALLEN , PHILLIP BROCK , CARL LARSON , DANIEL SANDERS , RATNAM SOORIYAKUMARAN , LINDA SUNDBERG , HOA TRUONG , GREGORY WALLRAFF
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： G03C1/00
- IPC分类号： G03C1/00
摘要：
Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
公开/授权文献
- US08945808B2 Self-topcoating resist for photolithography 公开/授权日：2015-02-03
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