摘要:
Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
摘要:
A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.
摘要:
Disclosed is a topcoat composition comprising a polymer having a dissolution rate of at least 1500 Å/second in an aqueous alkaline developer, and at least one solvent. The topcoat composition can be used to coat a photoresist layer on a material layer on a substrate, for example, a semiconductor chip. Also disclosed is a method of forming a pattern in the material layer of the coated substrate.
摘要:
Provided is a hydrophobic negative tone developable (NTD) resist composition comprising (a) a hydrophobic polymer having (i) at least one nonpolar acid-stable group; and (ii) at least one nonpolar acid-labile group, and (b) a photoacid generator (PAG) that may or may not be bound to the polymer, wherein a nonpolar aromatic or aliphatic organic hydrocarbon solvent is used to develop the unexposed regions of the NTD resist film and the resist film is not developable in an aqueous base developer, such as 0.26 N TMAH.