发明申请
US20070257293A1 Semiconductor memory device and method for production of the semiconductor memory device
审中-公开
半导体存储器件及半导体存储器件的制造方法
- 专利标题: Semiconductor memory device and method for production of the semiconductor memory device
- 专利标题(中): 半导体存储器件及半导体存储器件的制造方法
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申请号: US11429929申请日: 2006-05-08
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公开(公告)号: US20070257293A1公开(公告)日: 2007-11-08
- 发明人: Josef Willer
- 申请人: Josef Willer
- 主分类号: H01L29/94
- IPC分类号: H01L29/94 ; H01L27/108 ; H01L29/76 ; H01L31/119
摘要:
The semiconductor memory device has a substrate with a main surface, on which parallel trenches are arranged. A memory layer is disposed at the sidewalls of the trenches, and gate electrodes are disposed in the trenches. Buried bitlines are formed as doped regions between neighboring trenches. The buried bitlines abut the sidewalls of the trenches and comprise upper surfaces, which are arranged at a specified distance from the bottom of the trenches. Source/drain regions are formed by sections of the buried bitlines.