发明申请
- 专利标题: MULTILAYER ELECTRODE STRUCTURES INCLUDING CAPACITOR STRUCTURES HAVING ALUMINUM OXIDE DIFFUSION BARRIERS AND METHODS OF FORMING THE SAME
- 专利标题(中): 包括具有氧化铝扩散障碍物的电容器结构的多层电极结构及其形成方法
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申请号: US11733970申请日: 2007-04-11
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公开(公告)号: US20070257370A1公开(公告)日: 2007-11-08
- 发明人: Jong-Cheol Lee , Kyoung-Ryul Yoon , Ki-Vin Im , Jae-Hyun Yeo , Eun-Ae Chung , Jin-Il Lee
- 申请人: Jong-Cheol Lee , Kyoung-Ryul Yoon , Ki-Vin Im , Jae-Hyun Yeo , Eun-Ae Chung , Jin-Il Lee
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2006-0039972 20060503
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L23/48 ; H01L29/40 ; H01L21/44
摘要:
A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium oxide and/or titanium oxide. The oxygen diffusion barrier layer is formed at an interface between the conductive layer and the oxide layer by re-oxidizing the oxide layer. The oxygen diffusion barrier layer includes aluminum oxide.
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