发明申请
US20070265797A1 METHOD AND ITS APPARATUS FOR INSPECTING PARTICLES OR DEFECTS OF A SEMICONDUCTOR DEVICE
有权
用于检查半导体器件的颗粒或缺陷的方法及其装置
- 专利标题： METHOD AND ITS APPARATUS FOR INSPECTING PARTICLES OR DEFECTS OF A SEMICONDUCTOR DEVICE
- 专利标题（中）： 用于检查半导体器件的颗粒或缺陷的方法及其装置
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申请号： US11782760申请日： 2007-07-25
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公开(公告)号： US20070265797A1公开(公告)日： 2007-11-15
- 发明人: Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ohshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
- 申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ohshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
- 优先权： JP2001-288013 20010921; JP2000-291952 20000921
- 主分类号： G06F15/00
- IPC分类号： G06F15/00
摘要：
An apparatus for inspecting particles and/or pattern defects of an object under inspection. Data processing means obtains information on size of the particles and/or the pattern defects from an intensity of the scattered light detected by the light detecting means by referring to a relationship between an intensity of scattered light from a standard particle and a size of the standard particle, and using a calibration coefficient for compensating for a change in intensity of the light of the illuminating means from a predetermined intensity.
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