发明申请
US20070266549A1 Process for the fabrication of multilayer thin film magnetoresistive sensors 失效
多层薄膜磁阻传感器的制造工艺

Process for the fabrication of multilayer thin film magnetoresistive sensors
摘要:
An improved method for the manufacture of magnetoresistive multilayer sensors is disclosed. The method is particularly advantageous for the production of magnetic tunnel junction (MTJ) sensors, which can be damaged at the air bearing surface by conventional lapping and ion milling. The disclosed process protects the ABS of the magnetoresistive sensor by depositing a diamond like carbon layer which remains in place through ion milling. The DLC layer is removed by oxidation subsequent to the formation of the ABS.
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