Invention Application
- Patent Title: Multilayer zinc oxide varistor
- Patent Title (中): 多层氧化锌压敏电阻
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Application No.: US11440064Application Date: 2006-05-25
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Publication No.: US20070273469A1Publication Date: 2007-11-29
- Inventor: Wei-Cheng Lien , Cheng-Tsung Kuo , Jun-Nun Lin , Jie-An Zhu , Li-Yun Zhang
- Applicant: Wei-Cheng Lien , Cheng-Tsung Kuo , Jun-Nun Lin , Jie-An Zhu , Li-Yun Zhang
- Applicant Address: TW Guishan Shiang
- Assignee: SFI Electronics Technology Inc.
- Current Assignee: SFI Electronics Technology Inc.
- Current Assignee Address: TW Guishan Shiang
- Main IPC: H01C7/10
- IPC: H01C7/10

Abstract:
A multilayer zinc oxide varistor without bismuth oxide system ingredients, and having variable breakdown voltages by controlling the thickness of the ceramic material; the varistor is bismuth-free and composed of zinc oxide as the primary constituent with alkaline earth element (Ba) as first additive, at least one of transition elements of Mn, Co, Cr, or Ni as second additives, at least one of rare earth elements of Pr, La, Ce, Nd or Tb as third additives and at least one of B, Si, Se, Al, Ti, W, Sn, Sb, Na, or K as rest additives, and the bismuth-free and zinc oxide based varistor exhibits an excellent ESD (Electro-Static Discharge) withstanding characteristic.
Public/Granted literature
- US07541910B2 Multilayer zinc oxide varistor Public/Granted day:2009-06-02
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