公开(公告)号：US20080191834A1

公开(公告)日：2008-08-14

申请号：US11704987

申请日：2007-02-12

Applicant: Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Xing-Guang Huang ,  Wei-Cheng Lien

Inventor： Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Xing-Guang Huang ,  Wei-Cheng Lien

IPC: H01C7/12 ,  C03C11/00

CPC classification number: H01C7/105 ,  B82Y30/00 ,  C03C14/006 ,  C03C2214/05 ,  C03C2214/08 ,  C03C2214/16 ,  C04B35/453 ,  C04B35/46 ,  C04B35/4682 ,  C04B35/47 ,  C04B35/565 ,  C04B35/624 ,  C04B35/62805 ,  C04B35/62807 ,  C04B35/62886 ,  C04B2235/3275 ,  C04B2235/3284 ,  C04B2235/3298 ,  C04B2235/36 ,  C04B2235/405 ,  C04B2235/408 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/6025 ,  H01C7/12

Abstract: A low-capacitance multilayer chip varistor has capacitance lower than 0.5 pF at 1 MHz and has a characteristic of resisting more than thousands of times of 8 KV electrostatic shock, which comprises a ceramic main body, outer electrodes disposed at two ends of the ceramic main body and inner electrodes disposed therein; the ceramic main body comprises inorganic glass of 3˜50 wt % and semi-conductive or conductive particles of 50˜97 wt % with particle size of more than 0.1 μm, and a layer of inorganic glass film covers the surface of semi-conductive or conductive particles, wherein the inorganic glass film contains semi-conductive or conductive particles of submicron or nanometer which is smaller than 1 micron, and the quantity contained of semi-conductive or conductive particles is less than 20 wt % of that of inorganic glass.

Abstract translation: 低容量多层片式压敏电阻在1MHz时的电容低于0.5pF，具有耐8千伏静电电击的数千倍的特性，其中包括一陶瓷主体，外电极位于陶瓷主体的两端 主体和内部电极; 陶瓷主体包括3〜50重量％的无机玻璃和50〜97重量％的粒径大于0.1微米的半导体或导电颗粒，无机玻璃膜层覆盖半导体或 导电颗粒，其中无机玻璃膜含有小于1微米的亚微米或纳米的半导电或导电颗粒，并且半导体或导电颗粒所含的量小于无机玻璃的20重量％。

公开(公告)号：US07541910B2

公开(公告)日：2009-06-02

申请号：US11440064

申请日：2006-05-25

Applicant: Wei-Cheng Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang

Inventor： Wei-Cheng Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang

IPC: H01C7/10

CPC classification number: H01C7/10 ,  H01C7/112 ,  H01C7/18

Abstract: A multilayer zinc oxide varistor without bismuth oxide system ingredients, and having variable breakdown voltages by controlling the thickness of the ceramic material; the varistor is bismuth-free and composed of zinc oxide as the primary constituent with alkaline earth element (Ba) as first additive, at least one of transition elements of Mn, Co, Cr, or Ni as second additives, at least one of rare earth elements of Pr, La, Ce, Nd or Tb as third additives and at least one of B, Si, Se, Al, Ti, W, Sn, Sb, Na, or K as rest additives, and the bismuth-free and zinc oxide based varistor exhibits an excellent ESD (Electro-Static Discharge) withstanding characteristic.

Abstract translation: 一种不含氧化铋体系成分的多层氧化锌压敏电阻，通过控制陶瓷材料的厚度具有可变的击穿电压; 所述变阻器是无铋的，以氧化锌为主要成分的碱土金属元素（Ba）作为第一添加剂，Mn，Co，Cr或Ni的过渡元素中的至少一种作为第二添加剂，至少一种稀有金属 作为第三添加剂的Pr，La，Ce，Nd或Tb的土元素，作为剩余添加剂的B，Si，Se，Al，Ti，W，Sn，Sb，Na或K中的至少一种， 基于氧化锌的变阻器具有优异的ESD（静电放电）耐受特性。

公开(公告)号：US20070273469A1

公开(公告)日：2007-11-29

申请号：US11440064

申请日：2006-05-25

Applicant: Wei-Cheng Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang

Inventor： Wei-Cheng Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang

IPC: H01C7/10

CPC classification number: H01C7/10 ,  H01C7/112 ,  H01C7/18

Abstract: A multilayer zinc oxide varistor without bismuth oxide system ingredients, and having variable breakdown voltages by controlling the thickness of the ceramic material; the varistor is bismuth-free and composed of zinc oxide as the primary constituent with alkaline earth element (Ba) as first additive, at least one of transition elements of Mn, Co, Cr, or Ni as second additives, at least one of rare earth elements of Pr, La, Ce, Nd or Tb as third additives and at least one of B, Si, Se, Al, Ti, W, Sn, Sb, Na, or K as rest additives, and the bismuth-free and zinc oxide based varistor exhibits an excellent ESD (Electro-Static Discharge) withstanding characteristic.

Abstract translation: 一种不含氧化铋体系成分的多层氧化锌压敏电阻，通过控制陶瓷材料的厚度具有可变的击穿电压; 所述变阻器是无铋的，以氧化锌为主要成分的碱土金属元素（Ba）作为第一添加剂，Mn，Co，Cr或Ni的过渡元素中的至少一种作为第二添加剂，至少一种稀有金属 作为第三添加剂的Pr，La，Ce，Nd或Tb的土元素，作为剩余添加剂的B，Si，Se，Al，Ti，W，Sn，Sb，Na或K中的至少一种， 基于氧化锌的变阻器具有优异的ESD（静电放电）耐受特性。

公开(公告)号：US5369390A

公开(公告)日：1994-11-29

申请号：US35673

申请日：1993-03-23

Applicant: Jun-Nun Lin ,  Chio-Chun Kao

Inventor： Jun-Nun Lin ,  Chio-Chun Kao

IPC: H01C7/112 ,  H01C7/10

CPC classification number: H01C7/112

Abstract: A multilayer zinc oxide varistor including bismuth oxide system ingredients, and having variable breakdown voltages by controlling the thickness of the ceramic material.

Abstract translation: 包含氧化铋系成分的多层氧化锌变阻器，通过控制陶瓷材料的厚度，具有可变的击穿电压。

公开(公告)号：US07724124B2

公开(公告)日：2010-05-25

申请号：US11704987

申请日：2007-02-12

Applicant: Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Xing-Guang Huang ,  Wei-Cheng Lien

Inventor： Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Xing-Guang Huang ,  Wei-Cheng Lien

IPC: H01C7/10

CPC classification number: H01C7/105 ,  B82Y30/00 ,  C03C14/006 ,  C03C2214/05 ,  C03C2214/08 ,  C03C2214/16 ,  C04B35/453 ,  C04B35/46 ,  C04B35/4682 ,  C04B35/47 ,  C04B35/565 ,  C04B35/624 ,  C04B35/62805 ,  C04B35/62807 ,  C04B35/62886 ,  C04B2235/3275 ,  C04B2235/3284 ,  C04B2235/3298 ,  C04B2235/36 ,  C04B2235/405 ,  C04B2235/408 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/6025 ,  H01C7/12

Abstract: A low-capacitance multilayer chip varistor has capacitance lower than 0.5 pF at 1 MHz and has a characteristic of resisting more than thousands of times of 8 KV electrostatic shock, which comprises a ceramic main body, outer electrodes disposed at two ends of the ceramic main body and inner electrodes disposed therein; the ceramic main body comprises inorganic glass of 3˜50 wt % and semi-conductive or conductive particles of 50˜97 wt % with particle size of more than 0.1 μm, and a layer of inorganic glass film covers the surface of semi-conductive or conductive particles, wherein the inorganic glass film contains semi-conductive or conductive particles of submicron or nanometer which is smaller than 1 micron, and the quantity contained of semi-conductive or conductive particles is less than 20 wt % of that of inorganic glass.

Abstract translation: 低容量多层片式压敏电阻在1MHz时的电容低于0.5pF，具有耐8千伏静电电击的数千倍的特性，其中包括一陶瓷主体，外电极位于陶瓷主体的两端 主体和内部电极; 陶瓷主体包含3〜50重量％的无机玻璃和粒径大于0.1μm的50〜97重量％的半导电性或导电性粒子，无机玻璃膜层覆盖半导电性或 导电颗粒，其中无机玻璃膜含有小于1微米的亚微米或纳米的半导电或导电颗粒，并且半导体或导电颗粒所含的量小于无机玻璃的20重量％。