发明申请
US20070284618A1 Transistor layout for standard cell with optimized mechanical stress effect
有权
具有优化机械应力效应的标准电池的晶体管布局
- 专利标题： Transistor layout for standard cell with optimized mechanical stress effect
- 专利标题（中）： 具有优化机械应力效应的标准电池的晶体管布局
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申请号： US11441557申请日： 2006-05-26
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公开(公告)号： US20070284618A1公开(公告)日： 2007-12-13
- 发明人: Mi-Chang Chang , Liang-Kai Han , Huan-Tsung Huang , Wen-Jya Liang , Li-Chun Tien
- 申请人： Mi-Chang Chang , Liang-Kai Han , Huan-Tsung Huang , Wen-Jya Liang , Li-Chun Tien
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L29/739
摘要：
A layout for a transistor in a standard cell is disclosed. The layout for a transistor comprises an active region with at least one portion having a first edge and at least one portion having a second edge all perpendicular to a channel of the transistor; and a gate placed on top of the active region with a distance from an edge of the gate to the first edge being shorter than a distance from the edge of the gate to the second edge of the active region, wherein the active region is of a non-rectangular shape.
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