发明申请
US20070298614A1 Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer
失效
用于通过单晶片工艺蚀刻晶片的装置和用于蚀刻晶片的单晶片型方法
- 专利标题： Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer
- 专利标题（中）： 用于通过单晶片工艺蚀刻晶片的装置和用于蚀刻晶片的单晶片型方法
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申请号： US11893538申请日： 2007-08-15
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公开(公告)号： US20070298614A1公开(公告)日： 2007-12-27
- 发明人: Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
- 申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
- 专利权人： Sumco Corporation
- 当前专利权人： Sumco Corporation
- 优先权： JP2005-302538 20051018
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.
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