公开(公告)号：US20090042390A1

公开(公告)日：2009-02-12

申请号：US11836493

申请日：2007-08-09

申请人： Sakae Koyata ,  Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi

发明人： Sakae Koyata ,  Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi

IPC分类号： H01L21/302 ,  C09K13/08

CPC分类号： H01L21/30608 ,  C09K13/02 ,  C09K13/08 ,  H01L21/02019

摘要： It is possible to reduce workloads of a both-side simultaneous polishing process or a single-side polishing process, and to achieve both of the maintenance of the wafer flatness and the reduction in wafer front side roughness upon completing a flattening process. A method for manufacturing silicon wafers according to the present invention includes a flattening process 13 of grinding or lapping front and back sides of a thin disc-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process of immersing the silicon wafer in an etchant for controlling a silicon wafer surface shape in which a fluorochemical surfactant is uniformly mixed in an alkaline aqueous solution to etch the front and back sides of the silicon wafer, and a both-side simultaneous polishing process 16 of simultaneously polishing the front and back sides of the etched silicon wafer or a single-side polishing process of polishing the front and back sides of the etched wafer for every side, in this order.

摘要翻译： 可以减少双面同时抛光工艺或单面抛光工艺的工作量，并且在完成平坦化处理时实现晶片平整度的维持和晶片正面粗糙度的降低。 根据本发明的硅晶片的制造方法包括：通过对硅单晶锭进行切片而得到的薄片状硅晶片的正面和背面进行研磨或研磨的平坦化工艺13，将硅晶片浸入的蚀刻工艺 用于控制硅晶片表面形状的蚀刻剂，其中含氟表面活性剂在碱性水溶液中均匀混合以蚀刻硅晶片的正面和背面;以及双面同时抛光工艺16，同时抛光前后 蚀刻的硅晶片的侧面或者对于每一侧抛光蚀刻后的晶片的正面和背面的单面抛光工艺。

公开(公告)号：US20070298614A1

公开(公告)日：2007-12-27

申请号：US11893538

申请日：2007-08-15

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/306

CPC分类号： H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

摘要翻译： 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

公开(公告)号：US08066896B2

公开(公告)日：2011-11-29

申请号：US11893538

申请日：2007-08-15

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： B44C1/22

CPC分类号： H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

摘要翻译： 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

公开(公告)号：US20100151597A1

公开(公告)日：2010-06-17

申请号：US12161070

申请日：2007-01-17

申请人： Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

发明人： Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

IPC分类号： H01L21/306 ,  C23F1/08

CPC分类号： H01L21/30604 ,  H01L21/02019 ,  H01L21/6708

摘要： Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface.

摘要翻译： 公开了一种通过切割半导体晶锭获得的晶片的至少一侧的表面的平滑化方法。 在该方法中，根据晶片表面的突起施加流体，从而减少突起。 或者，将流体施加在晶片表面上，从而使晶片的整个表面平滑，同时减少晶片表面中的突起。

公开(公告)号：US20070042567A1

公开(公告)日：2007-02-22

申请号：US11504969

申请日：2006-08-15

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/6708 ,  H01L21/02019 ,  H01L21/30604

摘要： A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid: nitric acid: phosphoric acid is 0.5 to 40%: 5 to 50%: 5 to 70%, respectively.

摘要翻译： 1.一种硅晶片的制造方法，其特征在于，具有通过将供给喷嘴供给蚀刻液的蚀刻液进行蚀刻的单晶片蚀刻工序，所述蚀刻液通过将硅单晶锭切片而得到的单晶片和薄片晶片的表面旋转， 晶片将蚀刻溶液铺展在晶片的所有表面上; 以及按照该顺序研磨晶片的表面的研磨步骤，其中在单晶片蚀刻步骤中使用的蚀刻溶液是含有氟化氢，硝酸和磷酸的酸性水溶液，其含量使得 其含量以氟酸：硝酸：磷酸的混合比例为0.5〜40％：5〜50％：5〜70％。

公开(公告)号：US07601644B2

公开(公告)日：2009-10-13

申请号：US11597169

申请日：2005-09-02

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/311

CPC分类号： B24B37/042 ,  H01L21/02019 ,  H01L21/30604

摘要： This silicon wafer production process comprises in the order indicated a planarization step, in which the front surface and the rear surface of a wafer are ground or lapped, a single-wafer acid etching step, in which an acid etching liquid is supplied to the surface of the wafer while spinning and the entire wafer surface is etched to control the surface roughness Ra to 0.20 μm or less, and a double-sided simultaneous polishing step, in which the front surface and the rear surface of the acid etched wafer are polished simultaneously. The process may comprise a single-sided polishing step, in which the top and bottom of the acid etched wafer are polished in turn, instead of the double-sided simultaneously polishing step.

摘要翻译： 该硅晶片制造方法按照顺序包括将晶片的前表面和后表面研磨或研磨的平坦化步骤，单晶片酸蚀刻步骤，其中将酸蚀刻液体供应到表面 并且整个晶片表面被蚀刻以将表面粗糙度Ra控制到0.20μm或更小，以及双面同时抛光步骤，其中酸蚀刻晶片的前表面和后表面被同时抛光 。 该方法可以包括单面抛光步骤，其中依次抛光酸蚀晶片的顶部和底部，而不是双面同时抛光步骤。

公开(公告)号：US20090053894A1

公开(公告)日：2009-02-26

申请号：US12162732

申请日：2007-01-24

申请人： Sakae Koyata ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Takeo Katoh

发明人： Sakae Koyata ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Takeo Katoh

IPC分类号： H01L21/302

CPC分类号： H01L21/30604 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02008 ,  H01L21/02019 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02634 ,  H01L21/02658

摘要： A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth.

摘要翻译： 提供一种制造能够减少在外延层上形成的表面缺陷或滑动的发生的外延晶片的方法。 该制造方法的特征在于包括：平滑步骤，根据硅晶片的表面形状控制蚀刻剂对晶片表面的施加，以平滑晶片表面; 以及基于外延生长在晶片的表面上形成由硅单晶形成的外延层的外延层形成步骤。

公开(公告)号：US07488400B2

公开(公告)日：2009-02-10

申请号：US11582880

申请日：2006-10-17

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/306 ,  H01L21/302

CPC分类号： H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

摘要翻译： 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

公开(公告)号：US08759229B2

公开(公告)日：2014-06-24

申请号：US12162732

申请日：2007-01-24

申请人： Sakae Koyata ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Takeo Katoh

发明人： Sakae Koyata ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Takeo Katoh

IPC分类号： H01L21/302

CPC分类号： H01L21/30604 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02008 ,  H01L21/02019 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02634 ,  H01L21/02658

摘要： A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth.

摘要翻译： 提供一种制造能够减少在外延层上形成的表面缺陷或滑动的发生的外延晶片的方法。 该制造方法的特征在于包括：平滑步骤，根据硅晶片的表面形状控制蚀刻剂对晶片表面的施加，以平滑晶片表面; 以及基于外延生长在晶片的表面上形成由硅单晶形成的外延层的外延层形成步骤。

公开(公告)号：US07955982B2

公开(公告)日：2011-06-07

申请号：US12161070

申请日：2007-01-17

申请人： Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

发明人： Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

IPC分类号： H01L21/311

CPC分类号： H01L21/30604 ,  H01L21/02019 ,  H01L21/6708

摘要： Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface.

摘要翻译： 公开了一种通过切割半导体晶锭获得的晶片的至少一侧的表面的平滑化方法。 在该方法中，根据晶片表面的突起施加流体，从而减少突起。 或者，将流体施加在晶片表面上，从而使晶片的整个表面平滑，同时减少晶片表面中的突起。