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    ETCHANT FOR SILICON WAFER SURFACE SHAPE CONTROL AND METHOD FOR MANUFACTURING SILICON WAFERS USING THE SAME
    1.
    发明申请
    ETCHANT FOR SILICON WAFER SURFACE SHAPE CONTROL AND METHOD FOR MANUFACTURING SILICON WAFERS USING THE SAME 审中-公开
    用于硅晶片表面形状控制的蚀刻和使用其制造硅波的方法

    公开(公告)号：US20090042390A1

    公开(公告)日：2009-02-12

    申请号：US11836493

    申请日：2007-08-09

    申请人： Sakae Koyata ,  Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi

    发明人： Sakae Koyata ,  Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi

    IPC分类号： H01L21/302 ,  C09K13/08

    CPC分类号： H01L21/30608 ,  C09K13/02 ,  C09K13/08 ,  H01L21/02019

    摘要： It is possible to reduce workloads of a both-side simultaneous polishing process or a single-side polishing process, and to achieve both of the maintenance of the wafer flatness and the reduction in wafer front side roughness upon completing a flattening process. A method for manufacturing silicon wafers according to the present invention includes a flattening process 13 of grinding or lapping front and back sides of a thin disc-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process of immersing the silicon wafer in an etchant for controlling a silicon wafer surface shape in which a fluorochemical surfactant is uniformly mixed in an alkaline aqueous solution to etch the front and back sides of the silicon wafer, and a both-side simultaneous polishing process 16 of simultaneously polishing the front and back sides of the etched silicon wafer or a single-side polishing process of polishing the front and back sides of the etched wafer for every side, in this order.

    摘要翻译： 可以减少双面同时抛光工艺或单面抛光工艺的工作量，并且在完成平坦化处理时实现晶片平整度的维持和晶片正面粗糙度的降低。 根据本发明的硅晶片的制造方法包括：通过对硅单晶锭进行切片而得到的薄片状硅晶片的正面和背面进行研磨或研磨的平坦化工艺13，将硅晶片浸入的蚀刻工艺 用于控制硅晶片表面形状的蚀刻剂，其中含氟表面活性剂在碱性水溶液中均匀混合以蚀刻硅晶片的正面和背面;以及双面同时抛光工艺16，同时抛光前后 蚀刻的硅晶片的侧面或者对于每一侧抛光蚀刻后的晶片的正面和背面的单面抛光工艺。

    Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer
    2.
    发明申请
    Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer 失效
    用于通过单晶片工艺蚀刻晶片的装置和用于蚀刻晶片的单晶片型方法

    公开(公告)号：US20070298614A1

    公开(公告)日：2007-12-27

    申请号：US11893538

    申请日：2007-08-15

    申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    IPC分类号： H01L21/306

    CPC分类号： H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

    摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

    摘要翻译： 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

    Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer
    3.
    发明授权
    Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer 失效
    用于通过单晶片工艺蚀刻晶片的装置和用于蚀刻晶片的单晶片型方法

    公开(公告)号：US08066896B2

    公开(公告)日：2011-11-29

    申请号：US11893538

    申请日：2007-08-15

    申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    IPC分类号： B44C1/22

    CPC分类号： H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

    摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

    摘要翻译： 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

    Process for producing silicon wafer
    5.
    发明申请
    Process for producing silicon wafer 有权
    硅晶片生产工艺

    公开(公告)号：US20070042567A1

    公开(公告)日：2007-02-22

    申请号：US11504969

    申请日：2006-08-15

    申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/6708 ,  H01L21/02019 ,  H01L21/30604

    摘要： A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid: nitric acid: phosphoric acid is 0.5 to 40%: 5 to 50%: 5 to 70%, respectively.

    摘要翻译： 1.一种硅晶片的制造方法，其特征在于，具有通过将供给喷嘴供给蚀刻液的蚀刻液进行蚀刻的单晶片蚀刻工序，所述蚀刻液通过将硅单晶锭切片而得到的单晶片和薄片晶片的表面旋转， 晶片将蚀刻溶液铺展在晶片的所有表面上; 以及按照该顺序研磨晶片的表面的研磨步骤，其中在单晶片蚀刻步骤中使用的蚀刻溶液是含有氟化氢，硝酸和磷酸的酸性水溶液，其含量使得 其含量以氟酸：硝酸：磷酸的混合比例为0.5〜40％：5〜50％：5〜70％。

    Etching Method of Single Wafer
    8.
    发明申请
    Etching Method of Single Wafer 审中-公开
    单晶片蚀刻方法

    公开(公告)号：US20090117749A1

    公开(公告)日：2009-05-07

    申请号：US12259940

    申请日：2008-10-28

    申请人： Sakae KOYATA ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    发明人： Sakae KOYATA ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30608 ,  H01L21/02019 ,  H01L21/02087 ,  H01L21/67075 ,  H01L21/6708

    摘要： Local shape collapse of a wafer end portion is suppressed to the minimum level, and a wafer front surface as well as a wafer end portion is uniformly etched while preventing an etchant from flowing to a wafer rear surface.There is provided an etching method of a single wafer which supplies an etchant onto a wafer front surface in a state where a single wafer having flattened front and rear surfaces is held, and etches the wafer front surface and a front surface side end portion by using a centrifugal force generated by horizontally rotating the wafer. According to this method, the etchant is intermittently supplied onto the front surface of the wafer in twice or more, supply of the etchant is stopped after the etchant for one process is supplied, and the etchant for the next process is supplied after the supplied etchant flows off from the end portion of the wafer.

    摘要翻译： 将晶片端部的局部形状塌陷抑制到最小水平，并且在防止蚀刻剂流入晶片后表面的同时均匀地蚀刻晶片前表面以及晶片端部。 提供了在保持具有平坦的前后表面的单个晶片的状态下将蚀刻剂提供到晶片前表面的状态的单晶片的蚀刻方法，并且通过使用晶片前表面和前表面侧端部蚀刻 通过水平旋转晶片产生的离心力。 根据该方法，蚀刻剂以两次或更多次间歇地供给到晶片的前表面上，在提供一个工艺的蚀刻剂之后停止供应蚀刻剂，并且在所提供的蚀刻剂之后提供用于下一工艺的蚀刻剂 从晶片的端部流出。

    Single Wafer Etching Apparatus and Single Wafer Etching Method
    9.
    发明申请
    Single Wafer Etching Apparatus and Single Wafer Etching Method 失效
    单晶片蚀刻设备和单晶片蚀刻方法

    公开(公告)号：US20070175863A1

    公开(公告)日：2007-08-02

    申请号：US11669431

    申请日：2007-01-31

    申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    IPC分类号： H01L47/00 ,  C03C15/00 ,  B44C1/22 ,  H01L21/306 ,  C23F1/00

    CPC分类号： H01L21/6708 ,  H01L21/02019 ,  H01L21/30604

    摘要： An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.

    摘要翻译： 本发明的目的是提供一种实现晶片的高平坦度和提高其生产率的单晶片蚀刻装置。 在单晶片蚀刻装置中，将从硅单晶锭切片的单个薄片状晶片安装在晶片卡盘上并在其上纺丝，并且用通过离心力供给的蚀刻溶液蚀刻晶片的整个前表面 通过旋转晶片11产生。 单晶硅晶片蚀刻装置包括能够将蚀刻溶液14从排出口26a，27a排出到晶片11的前表面上的多个供给喷嘴26,27，每个喷嘴移动装置能够独立地移动多个 供给喷嘴28,29和蚀刻液供给装置30，用于向多个供给喷嘴中的每一个供给蚀刻液14，并将蚀刻液14从各喷出口排出到晶片11的前表面。