Invention Application
- Patent Title: Semiconductor Device and Manufacturing Method Thereof, Semiconductor Package, and Electronic Apparatus
- Patent Title (中): 半导体器件及其制造方法，半导体封装和电子设备
-
Application No.: US11720066Application Date: 2005-11-25
-
Publication No.: US20080001288A1Publication Date: 2008-01-03
- Inventor: Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
- Applicant: Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
- Priority: JP2004-341002 20041125
- International Application: PCT/JP05/21729 WO 20051125
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/4763 ; H01L23/48
Abstract:
A terminal pad is formed on an active surface of an LSI chip, and a composite barrier metal layer is provided over this terminal pad. In the composite barrier metal layer, a plurality of low-elasticity particles composed of a silicone resin is dispersed throughout a metal base phase composed of NiP. The composite barrier metal layer has a thickness of, e.g., 3 μm, and the low-elasticity particles have a diameter of, e.g., 1 μm. A semiconductor device is mounted on a wiring board by bonding a solder bump to the composite barrier metal layer. The low-elasticity particles are thereby allowed to deform according to the applied stress when the semiconductor device is bonded to the wiring board via the solder bump, whereby the stress can be absorbed.
Information query
IPC分类:
