发明申请
- 专利标题: RESISTANCE CHANGE MEMORY DEVICE
- 专利标题(中): 电阻变化存储器件
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申请号: US11761823申请日: 2007-06-12
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公开(公告)号: US20080002456A1公开(公告)日: 2008-01-03
- 发明人: Haruki Toda , Koichi Kubo
- 申请人: Haruki Toda , Koichi Kubo
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JPJP2002-102640 20020404; JP2002/102640 20020404
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines wherein the memory cell includes, a variable resistance element for storing as information a resistance value and a Schottky diode connected in series to the variable resistance element. The variable resistance element has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d”-orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.
公开/授权文献
- US07623370B2 Resistance change memory device 公开/授权日:2009-11-24
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