发明申请
US20080012057A1 Semiconductor Device Using Fuse/Anti-Fuse System and Method of Manufacturing the Same
失效
使用保险丝/反熔丝系统的半导体器件及其制造方法
- 专利标题： Semiconductor Device Using Fuse/Anti-Fuse System and Method of Manufacturing the Same
- 专利标题（中）： 使用保险丝/反熔丝系统的半导体器件及其制造方法
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申请号： US11859388申请日： 2007-09-21
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公开(公告)号： US20080012057A1公开(公告)日： 2008-01-17
- 发明人: Yoshiaki Fukuzumi , Yusuke Kohyama
- 申请人： Yoshiaki Fukuzumi , Yusuke Kohyama
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2000-039968 20000217
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A first concave portion for the element isolation, a second concave portion for an aligning mark, and a third concave portion for an anti-fuse portion are formed simultaneously within a silicon substrate. After a silicon oxide film is formed on the entire surface, the silicon oxide film positioned within the second and third concave portions is removed. Then, a gate insulating film is formed on the entire surface, followed by forming a polysilicon film on the gate insulating film. Further, these polysilicon film and gate insulating film are selectively removed to form a gate electrode above an element region, an aligning mark portion in the second concave portion, and a gate electrode for an anti-fuse portion on the bottom surface of the third concave portion.
公开/授权文献
- US07615813B2 Semiconductor device using fuse/anti-fuse system 公开/授权日：2009-11-10
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