发明申请
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
-
申请号: US11826854申请日: 2007-07-19
-
公开(公告)号: US20080016383A1公开(公告)日: 2008-01-17
- 发明人: Takao Watanabe , Kunio Uchiyama , Osamu Nishii , Naohiko Irie , Hiroyuki Mizuno
- 申请人: Takao Watanabe , Kunio Uchiyama , Osamu Nishii , Naohiko Irie , Hiroyuki Mizuno
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 优先权: JP2002-175170 20020617
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
When a leakage current of a circuit block under a non-use state is reduced by means of a power switch, frequent ON/OFF operations of the switch within a short time invite an increase of consumed power, on the contrary. Because a pre-heating time is necessary from turn-on of the switch till the circuit block becomes usable, control of the switch during an operation deteriorates a processing time of a semiconductor device. The switch is ON/OFF-controlled with a task duration time of a CPU core for controlling logic circuits and memory cores as a unit. After the switch is turned off, the switch is again turned on before termination of the task in consideration of the pre-heating time.
信息查询