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79 条记录 (耗时 0.026 秒)

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07254082B2

    公开(公告)日：2007-08-07

    申请号：US11363060

    申请日：2006-02-28

    申请人： Takao Watanabe ,  Kunio Uchiyama ,  Osamu Nishii ,  Naohiko Irie ,  Hiroyuki Mizuno

    发明人： Takao Watanabe ,  Kunio Uchiyama ,  Osamu Nishii ,  Naohiko Irie ,  Hiroyuki Mizuno

    IPC分类号： G11C8/00 ,  G11C5/14

    CPC分类号： G06F1/3203 ,  G06F1/3287 ,  G11C5/147 ,  G11C11/417 ,  Y02D10/171

    摘要： When a leakage current of a circuit block under a non-use state is reduced by means of a power switch, frequent ON/OFF operations of the switch within a short time invite an increase of consumed power, on the contrary. Because a pre-heating time is necessary from turn-on of the switch till the circuit block becomes usable, control of the switch during an operation deteriorates a processing time of a semiconductor device. The switch is ON/OFF-controlled with a task duration time of a CPU core for controlling logic circuits and memory cores as a unit. After the switch is turned off, the switch is again turned on before termination of the task in consideration of the pre-heating time.

    摘要翻译： 相反，当通过电源开关减小不使用状态下的电路块的漏电流时，短时间内开关频繁的接通/断开操作会引起消耗功率的增加。 由于开关的接通需要预热时间，直到电路块变得可用，所以在操作期间的开关的控制使半导体器件的处理时间变差。 该开关通过CPU核心的任务持续时间进行ON / OFF控制，用于将逻辑电路和存储器核心作为一个单元进行控制。 关闭开关后，考虑到预热时间，开关将在任务结束前再次打开。

    Semiconductor device
    3.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：US20080016383A1

    公开(公告)日：2008-01-17

    申请号：US11826854

    申请日：2007-07-19

    申请人： Takao Watanabe ,  Kunio Uchiyama ,  Osamu Nishii ,  Naohiko Irie ,  Hiroyuki Mizuno

    发明人： Takao Watanabe ,  Kunio Uchiyama ,  Osamu Nishii ,  Naohiko Irie ,  Hiroyuki Mizuno

    IPC分类号： G11C5/14

    CPC分类号： G06F1/3203 ,  G06F1/3287 ,  G11C5/147 ,  G11C11/417 ,  Y02D10/171

    摘要： When a leakage current of a circuit block under a non-use state is reduced by means of a power switch, frequent ON/OFF operations of the switch within a short time invite an increase of consumed power, on the contrary. Because a pre-heating time is necessary from turn-on of the switch till the circuit block becomes usable, control of the switch during an operation deteriorates a processing time of a semiconductor device. The switch is ON/OFF-controlled with a task duration time of a CPU core for controlling logic circuits and memory cores as a unit. After the switch is turned off, the switch is again turned on before termination of the task in consideration of the pre-heating time.

    摘要翻译： 相反，当通过电源开关减小不使用状态下的电路块的漏电流时，短时间内开关频繁的接通/断开操作会引起消耗功率的增加。 由于开关的接通需要预热时间，直到电路块变得可用，所以在操作期间的开关的控制使半导体器件的处理时间变差。 该开关通过CPU核心的任务持续时间进行ON / OFF控制，用于将逻辑电路和存储器核心作为一个单元进行控制。 关闭开关后，考虑到预热时间，开关将在任务结束前再次打开。

    SUBSTRATE BIAS SWITCHING UNIT FOR A LOW POWER PROCESSOR
    5.
    发明申请
    SUBSTRATE BIAS SWITCHING UNIT FOR A LOW POWER PROCESSOR 失效
    用于低功率处理器的基板偏置开关单元

    公开(公告)号：US20100005324A1

    公开(公告)日：2010-01-07

    申请号：US12346268

    申请日：2008-12-30

    申请人： Yonetaro TOTSUKA ,  Koichiro Ishibashi ,  Hiroyuki Mizuno ,  Osamu Nishii ,  Kunio Uchiyama ,  Takanori Shimura ,  Asako Sekine ,  Yoichi Katsuki ,  Susumu Narita

    发明人： Yonetaro TOTSUKA ,  Koichiro Ishibashi ,  Hiroyuki Mizuno ,  Osamu Nishii ,  Kunio Uchiyama ,  Takanori Shimura ,  Asako Sekine ,  Yoichi Katsuki ,  Susumu Narita

    IPC分类号： G06F1/26

    CPC分类号： G06F1/3296 ,  G06F1/3203 ,  Y02D10/172 ,  Y02D50/20

    摘要： The feature of the present invention consists in: a processor main circuit for executing program instruction strings on a processor chip; a substrate bias switching unit for switching voltages of substrate biases applied to a substrate of the processor main circuit; and an operation mode control unit for controlling, in response to the execution of an instruction to proceed to a stand-by mode in the processor main circuit, the substrate bias switching unit in such a way that the biases are switched over to voltages for the stand-by mode, and for controlling, in response to an interruption of the stand-by release from the outside, the substrate bias switching unit in such a way that the biases are switched over to voltages for a normal mode, and also for releasing, after the bias voltages switched thereto have been stabilized, the stand-by of the processor main circuit to restart the operation.

    摘要翻译： 本发明的特征在于：处理器主电路，用于在处理器芯片上执行程序指令串; 衬底偏置切换单元，用于切换施加到处理器主电路的衬底的衬底偏压的电压; 以及操作模式控制单元，用于响应于执行处理器主电路中的待机模式的指令，控制所述衬底偏置切换单元，使得所述偏置切换到所述处理器主电路的电压 待机模式，并且为了响应于来自外部的待机释放的中断来控制衬底偏置切换单元，使得偏置被切换到用于正常模式的电压，并且还用于释放 在切换到其上的偏置电压已经稳定之后，处理器主电路的待机重新开始操作。

    Processor for controlling substrate biases in accordance to the operation modes of the processor
    6.
    发明授权
    Processor for controlling substrate biases in accordance to the operation modes of the processor 有权
    用于根据处理器的操作模式控制衬底偏压的处理器

    公开(公告)号：US06715090B1

    公开(公告)日：2004-03-30

    申请号：US09308488

    申请日：1999-05-20

    申请人： Yonetaro Totsuka ,  Koichiro Ishibashi ,  Hiroyuki Mizuno ,  Osamu Nishii ,  Kunio Uchiyama ,  Takanori Shimura ,  Asako Sekine ,  Yoichi Katsuki ,  Susumu Narita

    发明人： Yonetaro Totsuka ,  Koichiro Ishibashi ,  Hiroyuki Mizuno ,  Osamu Nishii ,  Kunio Uchiyama ,  Takanori Shimura ,  Asako Sekine ,  Yoichi Katsuki ,  Susumu Narita

    IPC分类号： G06F130

    CPC分类号： G06F1/3296 ,  G06F1/3203 ,  Y02D10/172 ,  Y02D50/20

    摘要： The feature of the present invention consists in: a processor main circuit for executing program instruction strings on a processor chip; a substrate bias switching unit for switching voltages of substrate biases applied to a substrate of the processor main circuit; and an operation mode control unit for controlling, in response to the execution of an instruction to proceed to a stand-by mode in the processor main circuit, the substrate bias switching unit in such a way that the biases are switched over to voltages for the stand-by mode, and for controlling, in response to an interruption of the stand-by release from the outside, the substrate bias switching unit in such a way that the biases are switched over to voltages for a normal mode, and also for releasing, after the bias voltages switched thereto have been stabilized, the stand-by of the processor main circuit to restart the operation.

    摘要翻译： 本发明的特征在于：处理器主电路，用于在处理器芯片上执行程序指令串; 衬底偏置切换单元，用于切换施加到处理器主电路的衬底的衬底偏压的电压; 以及操作模式控制单元，用于响应于执行处理器主电路中的待机模式的指令，控制所述衬底偏置切换单元，使得所述偏置切换到所述处理器主电路的电压 待机模式，并且为了响应于来自外部的待机释放的中断来控制衬底偏置切换单元，使得偏置被切换到用于正常模式的电压，并且还用于释放 在切换到其上的偏置电压已经稳定之后，处理器主电路的待机重新开始操作。

    Substrate bias switching unit for a low power processor
    8.
    发明授权
    Substrate bias switching unit for a low power processor 有权
    用于低功耗处理器的基板偏置开关单元

    公开(公告)号：US07475261B2

    公开(公告)日：2009-01-06

    申请号：US10768136

    申请日：2004-02-02

    申请人： Yonetaro Totsuka ,  Koichiro Ishibashi ,  Hiroyuki Mizuno ,  Osamu Nishii ,  Kunio Uchiyama ,  Takanori Shimura ,  Asako Sekine ,  Yoichi Katsuki ,  Susumu Narita

    发明人： Yonetaro Totsuka ,  Koichiro Ishibashi ,  Hiroyuki Mizuno ,  Osamu Nishii ,  Kunio Uchiyama ,  Takanori Shimura ,  Asako Sekine ,  Yoichi Katsuki ,  Susumu Narita

    IPC分类号： G06F1/00 ,  G06F1/26 ,  G06F1/32

    CPC分类号： G06F1/3296 ,  G06F1/3203 ,  Y02D10/172 ,  Y02D50/20

    摘要： The feature of the present invention consists in: a processor main circuit for executing program instruction strings on a processor chip; a substrate bias switching unit for switching voltages of substrate biases applied to a substrate of the processor main circuit; and an operation mode control unit for controlling, in response to the execution of an instruction to proceed to a stand-by mode in the processor main circuit, the substrate bias switching unit in such a way that the biases are switched over to voltages for the stand-by mode, and for controlling, in response to an interruption of the stand-by release from the outside, the substrate bias switching unit in such a way that the biases are switched over to voltages for a normal mode, and also for releasing, after the bias voltages switched thereto have been stabilized, the stand-by of the processor main circuit to restart the operation.

    摘要翻译： 本发明的特征在于：处理器主电路，用于在处理器芯片上执行程序指令串; 衬底偏置切换单元，用于切换施加到处理器主电路的衬底的衬底偏压的电压; 以及操作模式控制单元，用于响应于执行处理器主电路中的待机模式的指令，控制所述衬底偏置切换单元，使得所述偏置切换到所述处理器主电路的电压 待机模式，并且为了响应于来自外部的待机释放的中断来控制衬底偏置切换单元，使得偏置被切换到用于正常模式的电压，并且还用于释放 在切换到其上的偏置电压已经稳定之后，处理器主电路的待机重新开始操作。

    Substrate bias switching unit for a low power processor
    9.
    发明授权
    Substrate bias switching unit for a low power processor 失效
    用于低功耗处理器的基板偏置开关单元

    公开(公告)号：US07958379B2

    公开(公告)日：2011-06-07

    申请号：US12346268

    申请日：2008-12-30

    申请人： Yonetaro Totsuka ,  Koichiro Ishibashi ,  Hiroyuki Mizuno ,  Osamu Nishii ,  Kunio Uchiyama ,  Takanori Shimura ,  Asako Sekine ,  Yoichi Katsuki ,  Susumu Narita

    发明人： Yonetaro Totsuka ,  Koichiro Ishibashi ,  Hiroyuki Mizuno ,  Osamu Nishii ,  Kunio Uchiyama ,  Takanori Shimura ,  Asako Sekine ,  Yoichi Katsuki ,  Susumu Narita

    IPC分类号： G06F1/00 ,  G06F1/26 ,  G06F1/32 ,  B23K11/24

    CPC分类号： G06F1/3296 ,  G06F1/3203 ,  Y02D10/172 ,  Y02D50/20

    摘要： The feature of the present invention consists in: a processor main circuit for executing program instruction strings on a processor chip; a substrate bias switching unit for switching voltages of substrate biases applied to a substrate of the processor main circuit; and an operation mode control unit for controlling, in response to the execution of an instruction to proceed to a stand-by mode in the processor main circuit, the substrate bias switching unit in such a way that the biases are switched over to voltages for the stand-by mode, and for controlling, in response to an interruption of the stand-by release from the outside, the substrate bias switching unit in such a way that the biases are switched over to voltages for a normal mode, and also for releasing, after the bias voltages switched thereto have been stabilized, the stand-by of the processor main circuit to restart the operation.

    摘要翻译： 本发明的特征在于：处理器主电路，用于在处理器芯片上执行程序指令串; 衬底偏置切换单元，用于切换施加到处理器主电路的衬底的衬底偏压的电压; 以及操作模式控制单元，用于响应于执行处理器主电路中的待机模式的指令，控制所述衬底偏置切换单元，使得所述偏置切换到所述处理器主电路的电压 待机模式，并且为了响应于来自外部的待机释放的中断来控制衬底偏置切换单元，使得偏置被切换到用于正常模式的电压，并且还用于释放 在切换到其上的偏置电压已经稳定之后，处理器主电路的待机重新开始操作。

    Processor system using synchronous dynamic memory
    10.
    发明授权
    Processor system using synchronous dynamic memory 失效

    公开(公告)号：US07143230B2

    公开(公告)日：2006-11-28

    申请号：US10752569

    申请日：2004-01-08

    申请人： Kunio Uchiyama ,  Osamu Nishii

    发明人： Kunio Uchiyama ,  Osamu Nishii

    IPC分类号： G06F12/00

    CPC分类号： G11C8/18 ,  G11C7/1006 ,  G11C7/1072 ,  G11C8/12 ,  H04N19/423 ,  H04N19/61

    摘要： A main storage apparatus is a synchronous dynamic memory having a plurality of memory banks and a mode register for determining an operation mode, a main storage controller is coupled to a processor and the main storage apparatus, and means to realize controlling of parallel access to a plurality of banks of the memory and controlling of setting of an operation mode to the built-in register is arranged in the main storage controller. Accordingly, the use of a conventional processor of high generality and a conventional memory can be ensured.