发明申请
- 专利标题: CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, AND PHASE SHIFTER
- 专利标题(中): 结晶装置,结晶方法和相位改变
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申请号: US11861885申请日: 2007-09-26
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公开(公告)号: US20080019002A1公开(公告)日: 2008-01-24
- 发明人: Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 申请人: Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 申请人地址: JP Yokohama-shi 244-0817
- 专利权人: Advanced LCD Technologies Dev. Ctr. Co., Ltd
- 当前专利权人: Advanced LCD Technologies Dev. Ctr. Co., Ltd
- 当前专利权人地址: JP Yokohama-shi 244-0817
- 优先权: JP2002-262249 20020909
- 主分类号: G02B27/00
- IPC分类号: G02B27/00
摘要:
A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.