发明申请
- 专利标题: FORMATION OF FULLY SILICIDED METAL GATE USING DUAL SELF-ALIGNED SILICIDE PROCESS
- 专利标题(中): 使用双自对准硅胶工艺形成全硅酸金属门
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申请号: US11830277申请日: 2007-07-30
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公开(公告)号: US20080026551A1公开(公告)日: 2008-01-31
- 发明人: Cyril Cabral , Chester Dziobkowski , Sunfei Fang , Evgeni Gousev , Rajarao Jammy , Vijay Narayanan , Vamsi Paruchuri , Ghavam Shahidi , Michelle Steen , Clement Wann
- 申请人: Cyril Cabral , Chester Dziobkowski , Sunfei Fang , Evgeni Gousev , Rajarao Jammy , Vijay Narayanan , Vamsi Paruchuri , Ghavam Shahidi , Michelle Steen , Clement Wann
- 申请人地址: US NY Armonk 10504
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk 10504
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205
摘要:
An advanced gate structure that includes a filly silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. A method of forming the advanced gate structure is also provided in which the silicided source and drain regions are formed prior to formation of the silicided metal gate region.