发明申请
- 专利标题： COPPER DAMASCENE PROCESS
- 专利标题（中）： 铜加工工艺
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申请号： US11459931申请日： 2006-07-25
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公开(公告)号： US20080026579A1公开(公告)日： 2008-01-31
- 发明人: Kuo-Chih Lai , Mei-Ling Chen , Jei-Ming Chen , Hsin-Hsing Chen , Shih-Feng Su , Meng-Chi Chen
- 申请人： Kuo-Chih Lai , Mei-Ling Chen , Jei-Ming Chen , Hsin-Hsing Chen , Shih-Feng Su , Meng-Chi Chen
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A copper damascene process includes providing a substrate having a dielectric layer thereon, forming at least a copper damascene structure in the dielectric layer, performing a heat treatment on the substrate, and performing a reduction plasma treatment on a surface of the copper damascene structure. The impurities formed in the copper damascene process are removed by the heat treatment, therefore the copper damascene structure is completely reduced by the reduction plasma treatment and is improved.
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