In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.