公开(公告)号：US20080032041A1

公开(公告)日：2008-02-07

申请号：US11773302

申请日：2007-07-03

申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

IPC分类号： B05D5/12

CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.

摘要翻译： 在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽 前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。 该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。 随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。 钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。

公开(公告)号：US07691742B2

公开(公告)日：2010-04-06

申请号：US12365310

申请日：2009-02-04

申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

IPC分类号： H01L21/44 ,  H01L21/285

CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.

摘要翻译： 在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽 前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。 该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。 随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。 钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。

公开(公告)号：US07241686B2

公开(公告)日：2007-07-10

申请号：US11061039

申请日：2005-02-19

申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

IPC分类号： H01L21/44 ,  H01L21/07

CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

摘要： In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing material is deposited having a predetermined thickness. Usually, the TAIMATA is preheated prior to pulsing the tantalum precursor into the process chamber. Subsequently, a metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.

摘要翻译： 在本发明的一个实例中，提供了一种用于在处理室中的衬底上沉积含钽材料的方法，其包括将衬底暴露于含有TAIMATA的钽前体和至少一种次级前体以沉积含钽的 材料在原子层沉积（ALD）过程中。 重复ALD工艺，直到含有预定厚度的含钽材料沉积。 通常，在将钽前体脉冲进入处理室之前，将TAIMATA预热。 随后，诸如钨或铜的金属层可以沉积在含钽材料上。 含钽材料可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。 含钽材料可以作为阻挡层或粘合层沉积在源极/漏极器件内的通孔内或栅极电极材料中。

公开(公告)号：US20090202710A1

公开(公告)日：2009-08-13

申请号：US12365310

申请日：2009-02-04

申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

IPC分类号： C23C16/18

CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.

摘要翻译： 在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽 前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。 该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。 随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。 钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。

公开(公告)号：US07524762B2

公开(公告)日：2009-04-28

申请号：US11773302

申请日：2007-07-03

申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

IPC分类号： H01L21/44 ,  H01L21/07

CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.

摘要翻译： 在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽 前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。 该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。 随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。 钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。

公开(公告)号：US20060019495A1

公开(公告)日：2006-01-26

申请号：US11061039

申请日：2005-02-19

申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

IPC分类号： H01L21/00

CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

摘要： In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing film during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing film is deposited with a predetermined thickness. Usually, the TAIMATA is preheated prior pulsing the tantalum precursor into the process chamber. A metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may include tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.

摘要翻译： 在本发明的一个实例中，提供了一种用于在处理室中的衬底上沉积含钽材料的方法，其包括将衬底暴露于含有TAIMATA的钽前体和至少一种次级前体以沉积含钽的 在原子层沉积（ALD）过程中的膜。 重复ALD处理直到含有钽的膜以预定厚度沉积。 通常，TAIMATA在将钽前体脉冲进入处理室之前被预热。 诸如钨或铜的金属层可以沉积在含钽材料上。 含钽材料可以包括钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。 含钽材料可以作为阻挡层或粘附层沉积在源极/漏极器件内的通孔或栅电极材料内。

公开(公告)号：US07597758B2

公开(公告)日：2009-10-06

申请号：US11849125

申请日：2007-08-31

申请人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

发明人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC分类号： C30B23/08

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.

摘要翻译： 本发明的实施方案提供可在气相沉积工艺期间使用的化学前体安瓿。 在一个实施例中，提供了一种用于产生在气相沉积处理系统中使用的化学前体气体的装置，其包括具有侧壁，顶部和形成内部容积的底部的罐，以及固体前体材料，其至少部分地包含在 内部体积的较低区域。 该装置还包括与内部空间流体连通的入口端口和出口端口，以及连接到入口端口的入口管，并且定位成将载气朝向侧壁引导并从出口端口移开。 在一个实例中，固体前体含有五（二甲基氨基）钽（PDMAT）。 在另一示例中，该装置包含多个挡板，其在入口和出口之间形成延伸的平均流动路径。

公开(公告)号：US07588736B2

公开(公告)日：2009-09-15

申请号：US11383642

申请日：2006-05-16

申请人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

发明人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC分类号： F27B15/08

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.

摘要翻译： 提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。 罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。 在一个实施例中，挡板包含在位于罐底部的预制插入件上。 在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。 入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

公开(公告)号：US07265048B2

公开(公告)日：2007-09-04

申请号：US11069514

申请日：2005-03-01

申请人： Hua Chung ,  Seshadri Ganguli ,  Christophe Marcadal ,  Jick M. Yu

发明人： Hua Chung ,  Seshadri Ganguli ,  Christophe Marcadal ,  Jick M. Yu

IPC分类号： H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/28556 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089

摘要： A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.

摘要翻译： 一种用于在衬底上形成层的方法和装置，包括在具有孔的衬底表面上沉积金属籽晶层，在铜籽晶层上沉积过渡金属层，以及在过渡金属层上沉积体金属层。 还有一种用于通过电介质形成通孔以在通孔底部露出金属的方法和装置，沉积过渡金属层，以及在过渡金属层上沉积第一金属层。 另外，一种用于在暴露的金属表面上沉积过渡金属层并在其上沉积选自由封盖层和低介电常数层组成的层的方法和装置。

公开(公告)号：US20080216743A1

公开(公告)日：2008-09-11

申请号：US11849125

申请日：2007-08-31

申请人： LING CHEN ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

发明人： LING CHEN ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC分类号： C23C16/06

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.

摘要翻译： 本发明的实施方案提供可在气相沉积工艺期间使用的化学前体安瓿。 在一个实施例中，提供了一种用于产生在气相沉积处理系统中使用的化学前体气体的装置，其包括具有侧壁，顶部和形成内部容积的底部的罐，以及固体前体材料，其至少部分地包含在 内部体积的较低区域。 该装置还包括与内部空间流体连通的入口端口和出口端口，以及连接到入口端口的入口管，并且定位成将载气朝着侧壁引导并从出口端口移开。 在一个实例中，固体前体含有五（二甲基氨基）钽（PDMAT）。 在另一示例中，该装置包含多个挡板，其在入口和出口之间形成延伸的平均流动路径。