发明申请
- 专利标题： Methods for improving uniformity of cap layers
- 专利标题（中）： 改善盖层均匀性的方法
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申请号： US11524000申请日： 2006-09-20
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公开(公告)号： US20080032472A1公开(公告)日： 2008-02-07
- 发明人: Chen-Hua Yu , Ming-Shih Yeh , Chih-Hsien Lin , Yung-Cheng Lu , Hui-Lin Chang
- 申请人： Chen-Hua Yu , Ming-Shih Yeh , Chih-Hsien Lin , Yung-Cheng Lu , Hui-Lin Chang
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A method of forming an integrated circuit includes providing a semiconductor substrate, forming a metallization layer over the semiconductor substrate, wherein the metallization layer comprises a metal feature in a low-k dielectric layer and extending from a top surface of the low-k dielectric layer into the low-k dielectric layer, performing a treatment to the low-k dielectric layer to form a hydrophilic top surface, and plating a cap layer on the metal feature in a solution.
公开/授权文献
- US08987085B2 Methods for improving uniformity of cap layers 公开/授权日：2015-03-24
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