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    Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties
    2.
    发明授权
    Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties 有权
    ILD层的两步沉积后处理具有较低的介电常数和改善的机械性能

    公开(公告)号：US08158521B2

    公开(公告)日：2012-04-17

    申请号：US11781632

    申请日：2007-07-23

    申请人： Hui-Lin Chang ,  Chung-Chi Ko ,  Tien I Bao ,  Yun-Chen Lu

    发明人： Hui-Lin Chang ,  Chung-Chi Ko ,  Tien I Bao ,  Yun-Chen Lu

    IPC分类号： H01L21/311

    CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3124 ,  H01L21/31633 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835

    摘要： A method of lowering the dielectric constant of an organosilicon low k dielectric layer while improving the hardness and thermal stability is provided. A deposited layer of carbon doped oxide, HSQ, or MSQ is cured and treated with a He plasma which improves hardness for a subsequent CMP step and lowers the dielectric constant. There is no loss of H2O or CH4 during the He treatment. The low k dielectric layer is then treated with a H2 plasma which converts some of the Si—O and Si—CH3 bonds near the surface to Si—H bonds, thereby further lowering the dielectric constant and increasing thermal stability that improves breakdown resistance. Moisture uptake is also reduced. The method is especially useful for interconnect schemes with deep sub-micron ground rules. Surprisingly, the k value obtained from two different plasma treatments is lower than when two He treatments or two H2 treatment are performed.

    摘要翻译： 提供降低有机硅低k电介质层的介电常数同时提高硬度和热稳定性的方法。 掺杂碳的氧化物，HSQ或MSQ的沉积层用He等离子体固化和处理，其提高后续CMP步骤的硬度并降低介电常数。 在他治疗期间，没有H2O或CH4的损失。 然后用H 2等离子体处理低k电介质层，其将表面附近的一些Si-O和Si-CH 3键转化为Si-H键，从而进一步降低介电常数并增加热稳定性，从而提高耐击穿性。 吸湿也减少。 该方法对于具有深亚微米基准规则的互连方案特别有用。 令人惊讶的是，从两种不同的等离子体处理获得的k值低于执行两个He处理或两个H2处理时。

    Method for enhancing adhesion between layers
    9.
    发明申请
    Method for enhancing adhesion between layers 有权
    提高层间粘附性的方法

    公开(公告)号：US20080233765A1

    公开(公告)日：2008-09-25

    申请号：US11727133

    申请日：2007-03-23

    申请人： Chung-Chi Ko ,  Lih-Ping Li ,  Yung-Cheng Lu ,  Hui-Lin Chang ,  Chih-Hsien Lin

    发明人： Chung-Chi Ko ,  Lih-Ping Li ,  Yung-Cheng Lu ,  Hui-Lin Chang ,  Chih-Hsien Lin

    IPC分类号： H01L21/469 ,  H01L21/31

    CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

    摘要： A novel method for enhancing interface adhesion between adjacent dielectric layers, particularly between an etch stop layer and an overlying dielectric layer having a low dielectric constant (k) in the formation of metal interconnects during the fabrication of integrated circuits on semiconductor wafer substrates. The method may include providing a substrate, providing an etch stop layer on the substrate, providing an oxygen-rich dielectric pre-layer on the etch stop layer and providing a major dielectric layer on the oxygen-rich dielectric pre-layer. Metal interconnects are then formed in the dielectric layers. The oxygen-rich dielectric pre-layer between the etch stop layer and the upper dielectric layer prevents or minimizes peeling and cracking of the layers induced by stresses that are caused by chemical mechanical planarization of metal layers and/or chip packaging.

    摘要翻译： 一种新颖的方法，用于在半导体晶片衬底上的集成电路制造过程中，在金属互连的形成过程中，增强相邻电介质层之间的界面附着力，特别是在蚀刻停止层和具有低介电常数（k）的上覆电介质层之间。 该方法可以包括提供衬底，在衬底上提供蚀刻停止层，在蚀刻停止层上提供富氧介电预置层，并在富氧电介质预层上提供主要电介质层。 然后在电介质层中形成金属互连。 在蚀刻停止层和上部电介质层之间的富氧介电预层防止或最小化由金属层和/或芯片封装的化学机械平坦化引起的应力引起的层的剥离和破裂。