发明申请
- 专利标题： Method to Minimize CD Etch Bias
- 专利标题（中）： 减少CD蚀刻偏差的方法
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申请号： US11834299申请日： 2007-08-06
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公开(公告)号： US20080035606A1公开(公告)日： 2008-02-14
- 发明人: Jason Plumhoff , Sunil Srinivasan , David Johnson , Russell Westerman
- 申请人： Jason Plumhoff , Sunil Srinivasan , David Johnson , Russell Westerman
- 主分类号： G01R31/00
- IPC分类号： G01R31/00
摘要：
The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.
公开/授权文献
- US08187483B2 Method to minimize CD etch bias 公开/授权日：2012-05-29
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