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公开(公告)号：US20080035606A1
公开(公告)日：2008-02-14
申请号：US11834299
申请日：2007-08-06
IPC分类号： G01R31/00
摘要： The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.
摘要翻译： 本发明提供了一种在具有薄膜的光刻基片的等离子体蚀刻工艺中提高临界尺寸性能的方法。 使用第一组工艺条件将钝化膜沉积在光刻基板上。 使用第二组工艺条件从光刻基板蚀刻沉积的膜。 使用第三组工艺条件蚀刻光刻基片的暴露表面。 在光刻基板的等离子体处理期间，监测光刻基板的临界尺寸性能，以确保通过调整光刻基板的沉积和蚀刻等离子体处理来获得目标均匀性和特征宽度。
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公开(公告)号：US08187483B2
公开(公告)日：2012-05-29
申请号：US11834299
申请日：2007-08-06
摘要： The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.
摘要翻译： 本发明提供了一种在具有薄膜的光刻基片的等离子体蚀刻工艺中提高临界尺寸性能的方法。 使用第一组工艺条件将钝化膜沉积在光刻基板上。 使用第二组工艺条件从光刻基板蚀刻沉积的膜。 使用第三组工艺条件蚀刻光刻基片的暴露表面。 在光刻基板的等离子体处理期间，监测光刻基板的临界尺寸性能，以确保通过调整光刻基板的沉积和蚀刻等离子体处理来获得目标均匀性和特征宽度。
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公开(公告)号：US07867403B2
公开(公告)日：2011-01-11
申请号：US11756074
申请日：2007-05-31
申请人： Jason Plumhoff , Larry Ryan , John Nolan , David Johnson , Russell Westerman
发明人： Jason Plumhoff , Larry Ryan , John Nolan , David Johnson , Russell Westerman
CPC分类号： H01J37/32623 , G03F1/80 , H01J37/32724 , H01J2237/2001 , H01J2237/334
摘要： The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.
摘要翻译： 本发明提供一种用于处理光刻基片的方法，包括将光刻基片放置在腔室中的支撑构件上，其中光刻基片具有约零摄氏度至约五十摄氏度的初始温度。 将传热流体引入室中以将光刻基板冷却至小于约零摄氏度至小于零下四十度的目标温度。 在冷却的光刻基板的温度达到初始温度之前，对冷却的光刻基板进行等离子体处理。
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公开(公告)号：US20080149597A1
公开(公告)日：2008-06-26
申请号：US11756074
申请日：2007-05-31
申请人： Jason Plumhoff , Larry Ryan , John Nolan , David Johnson , Russell Westerman
发明人： Jason Plumhoff , Larry Ryan , John Nolan , David Johnson , Russell Westerman
IPC分类号： B44C1/22
CPC分类号： H01J37/32623 , G03F1/80 , H01J37/32724 , H01J2237/2001 , H01J2237/334
摘要： The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.
摘要翻译： 本发明提供一种用于处理光刻基片的方法，包括将光刻基片放置在腔室中的支撑构件上，其中光刻基片具有约零摄氏度至约五十摄氏度的初始温度。 将传热流体引入室中以将光刻基板冷却至小于约零摄氏度至小于零下四十度的目标温度。 在冷却的光刻基板的温度达到初始温度之前，对冷却的光刻基板进行等离子体处理。
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5.发明授权Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias 有权使用高密度等离子体和低频RF偏压在光掩模上蚀刻铬层公开(公告)号：US07008877B2
公开(公告)日：2006-03-07
申请号：US10839809
申请日：2004-05-03
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F1/80 , C23F4/00 , H01J37/321
摘要： The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, and a plasma is generated. An RF bias is supplied to the support member in the vacuum chamber through an RF bias frequency generator at or below the ion transit frequency. Exposed material is etched from the photolithographic substrate with improved CD Etch Linearity and CD Etch Bias since the low frequency bias allows the developed charge on the photolithographic substrate, generated by the plasma, to dissipate.
摘要翻译： 本发明提供一种蚀刻光刻基片的方法和装置。 将光刻基板放置在真空室中的支撑构件上。 将用于从光刻基板蚀刻材料的处理气体引入真空室中，并产生等离子体。 通过在离子转移频率处或低于离子转移频率的RF偏置频率发生器将RF偏压提供给真空室中的支撑构件。 通过改进的CD蚀刻线性和CD蚀刻偏压从光刻基板蚀刻暴露的材料，因为低频偏压允许由等离子体产生的光刻基板上的显影电荷消散。
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公开(公告)号：US07625824B2
公开(公告)日：2009-12-01
申请号：US11441811
申请日：2006-05-26
申请人： Jason Plumhoff
发明人： Jason Plumhoff
IPC分类号： H01L21/302
CPC分类号： G05B13/0265
摘要： The present invention provides a method for creating a process change detection algorithm. An evolutionary computing technique is applied to at least one process dataset containing at least one known process change. The evolutionary computing technique will generate a process state function (or a scaling coefficient set for use with an existing process state function) that optimizes detection of the known process changes. The generated process state function or coefficients can then be applied thereafter to future datasets (either in real-time or after processing) to detect process changes.
摘要翻译： 本发明提供了一种用于创建过程变化检测算法的方法。 进化计算技术被应用于至少一个包含至少一个已知过程变化的过程数据集。 进化计算技术将产生优化已知过程变化的检测的过程状态函数（或用于现有过程状态函数的缩放系数集）。 然后可以将生成的过程状态函数或系数应用于未来数据集（实时或后处理）以检测过程变化。
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公开(公告)号：US07749400B2
公开(公告)日：2010-07-06
申请号：US11634377
申请日：2006-12-04
申请人： Jason Plumhoff
发明人： Jason Plumhoff
CPC分类号： G03F1/32 , G03F1/80 , H01J2237/2001 , H01J2237/334
摘要： The present invention provides a method for processing a photolithographic substrate within a vacuum chamber. The method comprising the steps of cooling the photolithographic substrate to a target temperature before the photolithographic substrate is processed within the vacuum chamber. At least one processing gas is introduced into the vacuum chamber. After the photolithographic substrate is at the target temperature, a plasma is ignited from the processing gas wherein the photolithographic substrate is processed using the plasma. Upon completion of the processing, the photolithographic substrate is unloaded from the vacuum chamber.
摘要翻译： 本发明提供一种在真空室内处理光刻基片的方法。 该方法包括以下步骤：在真空室内处理光刻基片之前将光刻基板冷却至目标温度。 至少一种处理气体被引入真空室。 在光刻基板处于目标温度之后，从处理气体点燃等离子体，其中使用等离子体处理光刻基板。 在完成处理后，光刻基板从真空室中卸载。
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公开(公告)号：US20070138136A1
公开(公告)日：2007-06-21
申请号：US11634377
申请日：2006-12-04
申请人： Jason Plumhoff
发明人： Jason Plumhoff
IPC分类号： G01L21/30 , C23F1/00 , H01L21/461 , G06F19/00 , H01L21/302
CPC分类号： G03F1/32 , G03F1/80 , H01J2237/2001 , H01J2237/334
摘要： The present invention provides a method for processing a photolithographic substrate within a vacuum chamber. The method comprising the steps of cooling the photolithographic substrate to a target temperature before the photolithographic substrate is processed within the vacuum chamber. At least one processing gas is introduced into the vacuum chamber. After the photolithographic substrate is at the target temperature, a plasma is ignited from the processing gas wherein the photolithographic substrate is processed using the plasma. Upon completion of the processing, the photolithographic substrate is unloaded from the vacuum chamber.
摘要翻译： 本发明提供一种在真空室内处理光刻基片的方法。 该方法包括以下步骤：在真空室内处理光刻基片之前将光刻基板冷却至目标温度。 至少一种处理气体被引入真空室。 在光刻基板处于目标温度之后，从处理气体点燃等离子体，其中使用等离子体处理光刻基板。 在完成处理后，光刻基板从真空室中卸载。
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公开(公告)号：US20060287753A1
公开(公告)日：2006-12-21
申请号：US11441811
申请日：2006-05-26
申请人： Jason Plumhoff
发明人： Jason Plumhoff
CPC分类号： G05B13/0265
摘要： The present invention provides a method for creating a process change detection algorithm. An evolutionary computing technique is applied to at least one process dataset containing at least one known process change. The evolutionary computing technique will generate a process state function (or a scaling coefficient set for use with an existing process state function) that optimizes detection of the known process changes. The generated process state function or coefficients can then be applied thereafter to future datasets (either in real-time or after processing) to detect process changes.
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