The present invention provides a method of manufacturing a film including the steps of using a compound with borazine skeleton (preferably a compound expressed by a chemical formula (1) below (where R1-R6 may be identical with or different from each other, and are each independently selected from a group consisting of a hydrogen atom, and an alkyl group, an alkenyl group and an alkynyl group each having a carbon number of 1-4, on condition that at least one of R1-R6 is not the hydrogen atom)) as a raw material, and forming the film on a substrate by using a chemical vapor deposition method, characterized in that a negative charge is applied to a site for placing the substrate, and a semiconductor device utilizing a film manufactured by the method. With the present invention, it is possible to provide a method of manufacturing a film, which method stably provides a low dielectric constant and a high mechanical strength over a long period of time, reduces the amount of a gas component (outgas) emitted in heating the film, and avoids any trouble in the device manufacturing process.