发明申请
US20080043544A1 Memory device and method of improving the reliability of a memory device
审中-公开
存储器件和提高存储器件可靠性的方法
- 专利标题： Memory device and method of improving the reliability of a memory device
- 专利标题（中）： 存储器件和提高存储器件可靠性的方法
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申请号： US11507381申请日： 2006-08-21
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公开(公告)号： US20080043544A1公开(公告)日： 2008-02-21
- 发明人: Corvin Liaw , Milena Dimitrova , Michael Markert , Stefan Dietrich
- 申请人： Corvin Liaw , Milena Dimitrova , Michael Markert , Stefan Dietrich
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A memory device comprises a memory cell array comprising a plurality of memory cells, bitlines being electrically connected to the memory cells of the memory cell array, amplifier circuits being electrically connected to the bitlines and amplifying electrical signals carried in the bitlines, the amplifier circuits being activated and deactivated by means of amplifier circuit control nodes, and at least one potential supplying unit, by means of which potentials can be supplied to the amplifier circuits such that, in the deactivated state of the amplifier circuits, a decrease or a prevention of leakage currents through the amplifier circuits is caused.