发明申请
US20080043796A1 SURFACE-EMISSION LASER DIODE OPERABLE IN THE WAVELENGTH BAND OF 1.1-1.7 MICROMETERS AND OPTICAL TELECOMMUNICATION SYSTEM USING SUCH A LASER DIODE
有权
表面发射激光二极管在使用这种激光二极管的1.1-1.7微米波段和光电信系统的波长带
- 专利标题： SURFACE-EMISSION LASER DIODE OPERABLE IN THE WAVELENGTH BAND OF 1.1-1.7 MICROMETERS AND OPTICAL TELECOMMUNICATION SYSTEM USING SUCH A LASER DIODE
- 专利标题（中）： 表面发射激光二极管在使用这种激光二极管的1.1-1.7微米波段和光电信系统的波长带
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申请号： US11759615申请日： 2007-06-07
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公开(公告)号： US20080043796A1公开(公告)日： 2008-02-21
- 发明人: Naoto JIKUTANI , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
- 申请人： Naoto JIKUTANI , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
- 优先权： JP2001-050083 20010226; JP2001-050145 20010226; JP2001-050171 20010226; JP2001-051253 20010226; JP2001-051256 20010226; JP2001-051266 20010226; JP2001-053190 20010227; JP2001-053200 20010227; JP2001-053213 20010227; JP2001-053218 20010227; JP2001-053225 20010227; JP2001-073767 20010315; JP2001-090711 20010327; JP2002-019748 20020129; JP2002-033590 20020212; JP2002-050548 20020226; JP2002-130330 20020502; JP2003-118115 20030423
- 主分类号： H01S5/125
- IPC分类号： H01S5/125 ; G02B5/18
摘要：
A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.