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1.发明授权Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode 有权表面发射激光二极管可工作在1.1-7μm的波长带和使用这种激光二极管的光通信系统公开(公告)号：US06975663B2
公开(公告)日：2005-12-13
申请号：US10085204
申请日：2002-02-26
申请人： Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Shunichi Sato , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi , Naoto Jikutani , Takashi Takahashi , Akihiro Itoh
发明人： Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Shunichi Sato , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi , Naoto Jikutani , Takashi Takahashi , Akihiro Itoh
CPC分类号： H01S5/18361 , H01L2224/48091 , H01S5/0071 , H01S5/02284 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18313 , H01S5/18358 , H01S5/32366 , H01S5/423 , H01S2301/173 , H01L2924/00014
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译： 表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有 插入其间的中间折射率，厚度在5-50nm的范围内。
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2.发明申请Surface-emission laser diode operable in the wavelength band of 1.1-1.7 um and optical telecommunication system using such a laser diode 审中-公开表面发射激光二极管可在1.1-1.7微米的波长范围内工作，光通信系统采用这种激光二极管公开(公告)号：US20060093010A1
公开(公告)日：2006-05-04
申请号：US11220826
申请日：2005-09-08
申请人： Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Shunichi Sato , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi , Naoto Jikutani , Takashi Takahashi , Akihiro Itoh
发明人： Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Shunichi Sato , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi , Naoto Jikutani , Takashi Takahashi , Akihiro Itoh
CPC分类号： H01S5/18361 , H01L2224/48091 , H01S5/0071 , H01S5/02284 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18313 , H01S5/18358 , H01S5/32366 , H01S5/423 , H01S2301/173 , H01L2924/00014
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to a wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm
摘要翻译： 表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，具有异质缓冲层 其间具有中间折射率，其厚度在5-50nm的范围内
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3.发明授权Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode 有权表面发射激光二极管可在1.1-1.7微米的波长范围内工作，光通信系统采用这种激光二极管公开(公告)号：US07590159B2
公开(公告)日：2009-09-15
申请号：US11759615
申请日：2007-06-07
申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
IPC分类号： H01S5/00
CPC分类号： G02B5/285 , B82Y20/00 , G02B5/0833 , G02B6/4202 , G02B6/4214 , G02B6/4246 , G02B6/43 , H01L2224/48091 , H01L2924/12044 , H01S5/0014 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02296 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/173 , H01L2924/00014 , H01L2924/00
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译： 表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有 插入其间的中间折射率，厚度在5-50nm的范围内。
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4.发明申请SURFACE-EMISSION LASER DIODE OPERABLE IN THE WAVELENGTH BAND OF 1.1-1.7 MICROMETERS AND OPTICAL TELECOMMUNICATION SYSTEM USING SUCH A LASER DIODE 有权表面发射激光二极管在使用这种激光二极管的1.1-1.7微米波段和光电信系统的波长带公开(公告)号：US20080043796A1
公开(公告)日：2008-02-21
申请号：US11759615
申请日：2007-06-07
申请人： Naoto JIKUTANI , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto JIKUTANI , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
CPC分类号： G02B5/285 , B82Y20/00 , G02B5/0833 , G02B6/4202 , G02B6/4214 , G02B6/4246 , G02B6/43 , H01L2224/48091 , H01L2924/12044 , H01S5/0014 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02296 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/173 , H01L2924/00014 , H01L2924/00
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译： 表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有 插入其间的中间折射率，厚度在5-50nm的范围内。
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5.发明授权Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode 有权表面发射激光二极管可在1.1-1.7μm的波长范围内工作，光通信系统采用这种激光二极管公开(公告)号：US07245647B2
公开(公告)日：2007-07-17
申请号：US10697035
申请日：2003-10-31
申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
CPC分类号： G02B6/12007 , B82Y20/00 , G02B6/3821 , G02B6/4201 , G02B6/421 , G02B6/4249 , H01L2224/48091 , H01S5/0071 , H01S5/02284 , H01S5/0262 , H01S5/0683 , H01S5/18313 , H01S5/18358 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/176 , H01S2301/18 , H01S2304/04 , H01L2924/00014
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5–50 nm.
摘要翻译： 表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有 插入其间的中间折射率，厚度在5-50nm的范围内。
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6.发明授权公开(公告)号：US07968362B2
公开(公告)日：2011-06-28
申请号：US12408362
申请日：2009-03-20
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , C23C16/301 , C23C16/54 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/025 , H01L33/10 , H01L33/32 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。
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7.发明授权Vertical-cavity surface-emission type laser diode and fabrication process thereof 有权垂直腔表面发射型激光二极管及其制造工艺公开(公告)号：US07260137B2
公开(公告)日：2007-08-21
申请号：US11338220
申请日：2006-01-23
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译： 垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在 有源区中的有源层和下反射器。
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8.发明申请SEMICONDUCTOR LIGHT-EMITTING DEVICE, SURFACE-EMISSION LASER DIODE, AND PRODUCTION APPARATUS THEREOF, PRODUCTION METHOD, OPTICAL MODULE AND OPTICAL TELECOMMUNICATION SYSTEM 有权半导体发光器件，表面发射激光二极管及其生产设备，生产方法，光学模块和光电信系统公开(公告)号：US20090286342A1
公开(公告)日：2009-11-19
申请号：US12408362
申请日：2009-03-20
CPC分类号： H01L33/007 , B82Y20/00 , C23C16/301 , C23C16/54 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/025 , H01L33/10 , H01L33/32 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。
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公开(公告)号：US07453096B2
公开(公告)日：2008-11-18
申请号：US11404876
申请日：2006-04-17
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/10 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。
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公开(公告)号：US07180100B2
公开(公告)日：2007-02-20
申请号：US10788086
申请日：2004-02-27
CPC分类号： B82Y20/00 , H01S5/0224 , H01S5/0425 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/2063 , H01S5/2231 , H01S5/32366 , H01S5/34306 , H01S5/34333 , H01S5/34366 , H01S5/34386 , H01S5/423 , H01S2301/173 , H01S2301/176 , H01S2304/02 , H01S2304/025 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
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