Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
    9.
    发明授权
    Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus 有权
    表面发射激光元件,表面发射激光器阵列,光学扫描装置和成像装置

    公开(公告)号:US08035676B2

    公开(公告)日:2011-10-11

    申请号:US12432872

    申请日:2009-04-30

    IPC分类号: B41J2/45 H01S5/00

    摘要: In a surface emitting laser element, on a substrate whose normal direction of a principal surface is inclined, a resonator structural body including an active layer, and a lower semiconductor DBR and an upper semiconductor DBR sandwiching the resonator structural body are stacked. A shape of a current passing through region in an oxide confinement structure of the upper semiconductor DBR is symmetrical to an axis passing through a center of the current passing through region parallel to an X axis and symmetrical to an axis passing through the center of the current passing through region parallel to a Y axis, and a length of the current passing through region is greater in the Y axis direction than in the X axis direction. A thickness of an oxidized layer surrounding the current passing through region is greater in the −Y direction than in the +X and −X directions.

    摘要翻译: 在表面发射激光元件中,在主表面的法线方向倾斜的基板上堆叠包括有源层的谐振器结构体和夹持谐振器结构体的下半导体DBR和上半导体DBR。 上半导体DBR的氧化物限制结构中的电流通过区域的形状与通过平行于X轴的电流通过区域的中心的轴对称,并且与通过电流的中心的轴对称 通过区域与Y轴平行,并且电流通过区域的长度在Y轴方向上比在X轴方向上大。 围绕电流通过区域的氧化层的厚度在-Y方向上大于在+ X和-X方向上的厚度。