发明申请
US20080044338A1 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane
有权
化合物半导体部件的损伤评价方法，化合物半导体部件，氮化镓系化合物半导体部件和氮化镓系化合物半导体膜的制造方法
- 专利标题： Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane
- 专利标题（中）： 化合物半导体部件的损伤评价方法，化合物半导体部件，氮化镓系化合物半导体部件和氮化镓系化合物半导体膜的制造方法
-
申请号： US11907322申请日： 2007-10-11
-
公开(公告)号： US20080044338A1公开(公告)日： 2008-02-21
- 发明人: Akihiro Hachigo , Takayuki Nishiura
- 申请人： Akihiro Hachigo , Takayuki Nishiura
- 申请人地址： JP Osaka
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JPP2005-165957 20050606
- 主分类号： C01B21/06
- IPC分类号： C01B21/06
摘要：
A method of evaluating damage of a compound semiconductor member, comprising: a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a half width of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member, in an emission spectrum obtained by the measurement of photoluminescence.