发明申请
US20080048268A1 SEMICONDUCTOR FINFET STRUCTURES WITH ENCAPSULATED GATE ELECTRODES AND METHODS FOR FORMING SUCH SEMICONDUCTOR FINFET STRUCTURES
有权
具有封装栅极电极的半导体FINFET结构及其形成这种半导体FINFET结构的方法
- 专利标题： SEMICONDUCTOR FINFET STRUCTURES WITH ENCAPSULATED GATE ELECTRODES AND METHODS FOR FORMING SUCH SEMICONDUCTOR FINFET STRUCTURES
- 专利标题（中）： 具有封装栅极电极的半导体FINFET结构及其形成这种半导体FINFET结构的方法
-
申请号： US11923717申请日： 2007-10-25
-
公开(公告)号： US20080048268A1公开(公告)日： 2008-02-28
- 发明人: Louis Hsu , Jack Mandelman
- 申请人： Louis Hsu , Jack Mandelman
- 申请人地址： US NY Armonk 10504
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk 10504
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
Semiconductor structures in which the gate electrode of a FinFET is masked from the process introducing dopant into the fin body of the FinFET to form source/drain regions and methods of fabricating such semiconductor structures. The gate doping, and hence the work function of the gate electrode, is advantageously isolated from the process that dopes the fin body to form the source/drain regions. The sidewalls of the gate electrode are covered by sidewall spacers that are formed on the gate electrode but not on the sidewall of the fin body.