发明申请
US20080050880A1 STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE
审中-公开
具有可调触发电压的多器件半导体器件均匀触发的结构
- 专利标题： STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE
- 专利标题（中）： 具有可调触发电压的多器件半导体器件均匀触发的结构
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申请号： US11931634申请日： 2007-10-31
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公开(公告)号： US20080050880A1公开(公告)日： 2008-02-28
- 发明人: Michel Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher Putnam
- 申请人： Michel Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher Putnam
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
The present invention provides a method in which a low-resistance connection between the MOS channel and silicided source/drain regions is provided that has an independence from the extension ion implant process as well as device overlap capacitance. The method of the present invention broadly includes selectively removing outer spacers of an MOS structure and then selectively plating a metallic or intermetallic material on exposed portions of a semiconductor substrate that were previously protected by the outer spacers. The present invention also provides a semiconductor structure that is formed utilizing the method. The semiconductor structure includes a low-resistance connection between the silicided source/drain regions and the channel regions which includes a selectively plated metallic or intermetallic material.
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