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    STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE
    1.
    发明申请
    STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE 审中-公开
    具有可调触发电压的多器件半导体器件均匀触发的结构

    公开(公告)号：US20080050880A1

    公开(公告)日：2008-02-28

    申请号：US11931634

    申请日：2007-10-31

    申请人： Michel Abou-Khalil ,  Robert Gauthier ,  Hongmei Li ,  Junjun Li ,  Souvick Mitra ,  Christopher Putnam

    发明人： Michel Abou-Khalil ,  Robert Gauthier ,  Hongmei Li ,  Junjun Li ,  Souvick Mitra ,  Christopher Putnam

    IPC分类号： H01L21/336

    CPC分类号： H01L29/6659 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/458 ,  H01L29/6653 ,  H01L29/7833 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a method in which a low-resistance connection between the MOS channel and silicided source/drain regions is provided that has an independence from the extension ion implant process as well as device overlap capacitance. The method of the present invention broadly includes selectively removing outer spacers of an MOS structure and then selectively plating a metallic or intermetallic material on exposed portions of a semiconductor substrate that were previously protected by the outer spacers. The present invention also provides a semiconductor structure that is formed utilizing the method. The semiconductor structure includes a low-resistance connection between the silicided source/drain regions and the channel regions which includes a selectively plated metallic or intermetallic material.

    摘要翻译： 本发明提供了一种方法，其中提供了与扩展离子注入工艺无关的MOS沟道和硅化源极/漏极区之间的低电阻连接以及器件重叠电容。 本发明的方法广泛地包括选择性地去除MOS结构的外部间隔物，然后在先前由外部间隔物保护的半导体衬底的暴露部分上选择性地镀覆金属或金属间化合物。 本发明还提供了利用该方法形成的半导体结构。 半导体结构包括硅化源/漏区和沟道区之间的低电阻连接，其包括选择性镀金属或金属间化合物。

    STRUCTURE AND CIRCUIT TECHNIQUE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE
    2.
    发明申请
    STRUCTURE AND CIRCUIT TECHNIQUE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE 有权
    具有可调触发电压的多器件半导体器件的均匀触发的结构和电路技术

    公开(公告)号：US20080237721A1

    公开(公告)日：2008-10-02

    申请号：US11692481

    申请日：2007-03-28

    申请人： Michel J. Abou-Khalil ,  Robert Gauthier ,  Hongmei Li ,  Junjun Li ,  Souvick Mitra ,  Christopher S. Putnam

    发明人： Michel J. Abou-Khalil ,  Robert Gauthier ,  Hongmei Li ,  Junjun Li ,  Souvick Mitra ,  Christopher S. Putnam

    IPC分类号： H01L23/60

    CPC分类号： H01L27/0277 ,  H01L27/0262 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An external current injection source is provided to individual fingers of a multi-finger semiconductor device to provide the same trigger voltage across the multiple fingers. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.

    摘要翻译： 外部电流注入源被提供给多指半导体器件的各个指状物，以跨多个指状物提供相同的触发电压。 例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。 调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。 外部电流供应电路可以包括二极管或RC触发MOSFET。 可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

    DESIGN STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE
    4.
    发明申请
    DESIGN STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE 有权
    具有可调触发电压的多功能半导体器件的均匀触发设计结构

    公开(公告)号：US20090108289A1

    公开(公告)日：2009-04-30

    申请号：US11931517

    申请日：2007-10-31

    申请人： Michel J. Abou-Khalil ,  Robert Gauthier ,  Hongmei Li ,  Junjun Li ,  Souvick Mitra ,  Christopher S. Putnam

    发明人： Michel J. Abou-Khalil ,  Robert Gauthier ,  Hongmei Li ,  Junjun Li ,  Souvick Mitra ,  Christopher S. Putnam

    IPC分类号： H01L27/06

    CPC分类号： H01L27/0266 ,  H01L27/0259 ,  H01L27/0727 ,  H01L27/0817

    摘要： A design structure for a circuit providing the same trigger voltage across the multiple fingers is provided, which comprises a data representing an external current injection source connected to individual fingers of a multi-finger semiconductor device. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.

    摘要翻译： 提供了一种用于跨多个指状物提供相同触发电压的电路的设计结构，其包括表示连接到多指半导体器件的各个指状物的外部电流注入源的数据。 例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。 调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。 外部电流供应电路可以包括二极管或RC触发MOSFET。 可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

    Design structure for uniform triggering of multifinger semiconductor devices with tunable trigger voltage
    5.
    发明授权
    Design structure for uniform triggering of multifinger semiconductor devices with tunable trigger voltage 有权
    具有可调触发电压的多光子半导体器件均匀触发的设计结构

    公开(公告)号：US07714356B2

    公开(公告)日：2010-05-11

    申请号：US11931517

    申请日：2007-10-31

    申请人： Michel J. Abou-Khalil ,  Robert Gauthier ,  Hongmei Li ,  Junjun Li ,  Souvick Mitra ,  Christopher S. Putnam

    发明人： Michel J. Abou-Khalil ,  Robert Gauthier ,  Hongmei Li ,  Junjun Li ,  Souvick Mitra ,  Christopher S. Putnam

    IPC分类号： H01L27/06

    CPC分类号： H01L27/0266 ,  H01L27/0259 ,  H01L27/0727 ,  H01L27/0817

    摘要： A design structure for a circuit providing the same trigger voltage across the multiple fingers is provided, which comprises a data representing an external current injection source connected to individual fingers of a multi-finger semiconductor device. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.

    摘要翻译： 提供了一种用于跨多个指状物提供相同触发电压的电路的设计结构，其包括表示连接到多指半导体器件的各个指状物的外部电流注入源的数据。 例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。 调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。 外部电流供应电路可以包括二极管或RC触发MOSFET。 可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

    Conditional Process-Aided Multiple-Points Statistics Modeling
    7.
    发明申请
    Conditional Process-Aided Multiple-Points Statistics Modeling 审中-公开
    条件过程辅助多点统计建模

    公开(公告)号：US20150219793A1

    公开(公告)日：2015-08-06

    申请号：US14421372

    申请日：2013-08-23

    申请人： Hongmei Li ,  Tao Sun

    发明人： Hongmei Li ,  Tao Sun

    IPC分类号： G01V99/00 ,  G06F17/18

    摘要： A method of simulating a hydrocarbon reservoir is disclosed. A process-based model is generated that mimics a depositional process of the reservoir. The process-based model is analyzed to extract statistics of geometries of a body that forms part of the reservoir, and depositional rules of the body. An object-based modeling method is applied to construct multiple unconditional geologic models of the body using the statistics and the depositional rules. Training images are constructed using the multiple unconditional geologic models. Well data and gross thickness data are assigned into a simulation grid. A single multiple-point geostatistical simulation is performed using the training images. A three-dimensional (3D) reservoir model is constructed using results of the multiple-point geostatistical simulation.

    摘要翻译： 公开了一种模拟烃储层的方法。 生成基于过程的模型，其模拟储层的沉积过程。 分析基于过程的模型，以提取形成储层的一部分的身体的几何体的统计数据，以及身体的沉积规则。 应用基于对象的建模方法，利用统计学和沉积规则构建身体的多个无条件地质模型。 使用多个无条件地质模型构建训练图像。 井数据和总厚度数据被分配到模拟网格中。 使用训练图像执行单个多点地统计模拟。 使用多点地统计模拟的结果构建三维（3D）储层模型。

    Analysis of compensated layout shapes
    9.
    发明授权
    Analysis of compensated layout shapes 失效
    补偿布局形状分析

    公开(公告)号：US08745571B2

    公开(公告)日：2014-06-03

    申请号：US13026451

    申请日：2011-02-14

    申请人： Hongmei Li ,  Richard Q. Williams

    发明人： Hongmei Li ,  Richard Q. Williams

    IPC分类号： G06F15/04

    CPC分类号： G06F17/5018 ,  G06F17/5068

    摘要： The disclosure relates to the analysis of compensated layout shapes. A method in accordance with an embodiment includes: analyzing a semiconductor layout using a bucket structure, the layout including a semiconductor device; and applying a pattern template to a content of the bucket structure to identify a shape adjacent to the semiconductor device; wherein the pattern template is derived from layout groundrules.

    摘要翻译： 本公开涉及补偿布局形状的分析。 根据实施例的方法包括：使用铲斗结构分析半导体布局，所述布局包括半导体器件; 以及将图案模板应用到所述桶结构的内容以识别与所述半导体器件相邻的形状; 其中，图案模板是从布局基本原理中导出的。