发明申请
- 专利标题: LITHOGRAPHY AWARE LEAKAGE ANALYSIS
- 专利标题(中): LITHOGRAPHY AWARE泄漏分析
-
申请号: US11781043申请日: 2007-07-20
-
公开(公告)号: US20080052646A1公开(公告)日: 2008-02-28
- 发明人: Emre Tuncer , Hui Zheng , Vivek Raghavan , Anirudh Devgan , Amir Ajami , Alessandra Nardi , Tao Lin , Pramod Thazhathethil , Alfred Wong
- 申请人: Emre Tuncer , Hui Zheng , Vivek Raghavan , Anirudh Devgan , Amir Ajami , Alessandra Nardi , Tao Lin , Pramod Thazhathethil , Alfred Wong
- 申请人地址: US CA San Jose
- 专利权人: Magma Design Automation, Inc.
- 当前专利权人: Magma Design Automation, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method for performing leakage analysis includes receiving information specifying an integrated circuit. A neighborhood of shapes associated with the integrated circuit is then determined. Leakage information associated with the integrated circuit is generated based on the neighborhood of shapes. The neighborhood of shapes may be determined by determining a first set of spacings to a boundary of a first cell from an internal shape. A second set of spacings may be determined from the boundary of the first cell to a shape of a second cell. A lithography process may be characterized using the first and second set of spacings.
公开/授权文献
- US08572523B2 Lithography aware leakage analysis 公开/授权日:2013-10-29
信息查询