发明申请
- 专利标题: MEMORY CIRCUIT
- 专利标题(中): 存储器电路
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申请号: US11469746申请日: 2006-09-01
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公开(公告)号: US20080056041A1公开(公告)日: 2008-03-06
- 发明人: Corvin Liaw , Michael Markert , Stefan Dietrich , Milena Dimitrova
- 申请人: Corvin Liaw , Michael Markert , Stefan Dietrich , Milena Dimitrova
- 主分类号: G11C7/02
- IPC分类号: G11C7/02
摘要:
A memory circuit comprises a plurality of parallel bit-lines connected to a plurality of memory cells, a plurality of sense amplifiers connected to the bit-lines and a plurality of switches each of which being connected to a respective pair of bit-lines out of the plurality of bit-lines for switchably short-circuiting the respective pair of bit-lines. The bit-lines of the respective pair of bit-lines are connected to two different sense amplifiers, and the bit-lines of the respective pair of bit-lines are adjacent to a further bit-line disposed between the bit-lines of the respective pair of bit-lines.
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