发明申请
- 专利标题： METHODS FOR PLATING AND FABRICATION APPARATUS THEREOF
- 专利标题（中）： 其制造方法及其制造方法
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申请号： US11468142申请日： 2006-08-29
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公开(公告)号： US20080057211A1公开(公告)日： 2008-03-06
- 发明人: Chung-Hsien Chen , Chun-Chieh Lin , Hung-Wen Su , Minghsing Tsai , Shau-Lin Shue
- 申请人： Chung-Hsien Chen , Chun-Chieh Lin , Hung-Wen Su , Minghsing Tsai , Shau-Lin Shue
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： B05C3/00
- IPC分类号： B05C3/00 ; B05D1/18 ; C25D5/00
摘要：
A method for plating includes positioning a substrate facing a plating solution. The method also includes immersing the substrate into the plating solution while plating a layer of material over a surface of the substrate, wherein an immersion speed of the substrate is about 100 millimeters per second (mm/s) or more while at least one portion of the substrate contacts the plating solution.
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