Invention Application
- Patent Title: Photomask and pattern forming method employing the same
- Patent Title (中): 光掩模和使用其的图案形成方法
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Application No.: US11080511Application Date: 2005-03-16
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Publication No.: US20080057408A9Publication Date: 2008-03-06
- Inventor: Norio Hasegawa , Fumio Murai , Katsuya Hayano
- Applicant: Norio Hasegawa , Fumio Murai , Katsuya Hayano
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Priority: JP04-326433 19921207
- Main IPC: G03F9/00
- IPC: G03F9/00 ; G03C5/00
Abstract:
A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.
Public/Granted literature
- US20050158638A1 Photomask and pattern forming method employing the same Public/Granted day:2005-07-21
Information query
