发明申请
- 专利标题： Semiconductor light emitting device
- 专利标题（中）： 半导体发光器件
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申请号： US11516632申请日： 2006-09-07
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公开(公告)号： US20080061304A1公开(公告)日： 2008-03-13
- 发明人: Yan Huang , Kuo-An Chiu , Hua-Jun Peng , Jian Feng , Hung-Shen Chu
- 申请人： Yan Huang , Kuo-An Chiu , Hua-Jun Peng , Jian Feng , Hung-Shen Chu
- 申请人地址： HK New Territories
- 专利权人： Hong Kong Applied Science and Technology Research Institute Company Limited
- 当前专利权人： Hong Kong Applied Science and Technology Research Institute Company Limited
- 当前专利权人地址： HK New Territories
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.
公开/授权文献
- US07829905B2 Semiconductor light emitting device 公开/授权日：2010-11-09