公开(公告)号：US20080061304A1

公开(公告)日：2008-03-13

申请号：US11516632

申请日：2006-09-07

申请人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

发明人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/405 ,  H01L2933/0083

摘要： A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.

摘要翻译： 用于发射在主发射方向上具有预定带宽的光的半导体发光器件包括用于产生光的光产生区域; 以及具有覆盖所述带宽的至少一段的光子带隙的一维光子晶体结构。 一维光子晶体结构被定位成使得当来自发光区域的光入射时，具有在一维光子晶体结构的带隙内的波长的光在主要发射方向上被反射。

公开(公告)号：US07829905B2

公开(公告)日：2010-11-09

申请号：US11516632

申请日：2006-09-07

申请人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

发明人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

IPC分类号： H01L33/46

CPC分类号： H01L33/44 ,  H01L33/405 ,  H01L2933/0083

摘要： A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.

摘要翻译： 用于发射在主发射方向上具有预定带宽的光的半导体发光器件包括用于产生光的光产生区域; 以及具有覆盖所述带宽的至少一段的光子带隙的一维光子晶体结构。 一维光子晶体结构被定位成使得当来自发光区域的光入射时，具有在一维光子晶体结构的带隙内的波长的光在主要发射方向上被反射。

公开(公告)号：US20080061310A1

公开(公告)日：2008-03-13

申请号：US11516564

申请日：2006-09-07

申请人： Kuo An Chiu ,  Jian Feng ,  Huaijun Peng ,  Hung-Shen Chu ,  Shengmei Zheng

发明人： Kuo An Chiu ,  Jian Feng ,  Huaijun Peng ,  Hung-Shen Chu ,  Shengmei Zheng

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L33/46 ,  H01L2933/0083

摘要： A light emitting diode device includes a multi-layer stack of materials including a p-layer, a n-layer, and a light generating region for emission of light in a primary emission direction towards one of the p- and n-layers; a substantially transparent layer located at or adjacent said one of the p- and n-layers, having a first surface facing said one of the p- and n-layers and an opposed second surface; and a reflective surface formed at or adjacent the second surface of the transparent layer for directing at least a portion of the emitted light in a direction away from the primary emission direction so as to enhance light emission from a side of the light emitting diode device.

摘要翻译： 发光二极管装置包括多层堆叠的材料，包括p层，n层和发光区域，用于沿主发射方向朝向p层和n层之一发射光; 位于或邻近所述p层和n层之一的基本上透明的层，具有面对所述p层和n层之一的第一表面和相对的第二表面; 以及形成在所述透明层的第二表面处或邻近所述透明层的第二表面的反射表面，用于沿远离所述主发射方向的方向引导所述发射光的至少一部分，以便增强从所述发光二极管器件的侧面的光发射。

公开(公告)号：US20080061306A1

公开(公告)日：2008-03-13

申请号：US11518912

申请日：2006-09-12

申请人： Kuo An Chiu ,  Yan Huang ,  Hung-Shen Chu

发明人： Kuo An Chiu ,  Yan Huang ,  Hung-Shen Chu

IPC分类号： H01L33/00

CPC分类号： H01L33/641 ,  H01L33/405 ,  H01L33/642 ,  H01L33/648

摘要： A semiconductor light emitting device includes a multi-layer stack of materials including a layer of p-doped material, a layer of n-doped material, and a light generating region therebetween; a first thermal conduction path between the light generating region and the exterior of the device; and a second thermal conduction path having a higher thermal conductivity than that of the first thermal conduction path. The second thermal conduction path is for providing enhanced thermal dissipation from the light generating region to the exterior.

摘要翻译： 半导体发光器件包括多层堆叠的材料，包括p掺杂材料层，n掺杂材料层和它们之间的发光区域; 在所述光产生区域和所述装置的外部之间的第一热传导路径; 以及具有比第一导热路径高的热导率的第二导热路径。 第二热传导路径用于从光产生区域向外部提供增强的散热。

公开(公告)号：US20080135867A1

公开(公告)日：2008-06-12

申请号：US11638638

申请日：2006-12-12

申请人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

发明人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/38

摘要： A semiconductor device has a current spreading layer between a semiconductor material and an electrode for connecting the semiconductor material to an electrical power supply. The current spreading layer has two or more sub-layers of a first conductive material with patterned regions of a second conductive material distributed between the sub-layers for spreading an electrical current passing between the electrode and the semiconductor material. The second material has an ohmic resistance lower than the first material.

摘要翻译： 半导体器件在半导体材料和用于将半导体材料连接到电源的电极之间具有电流扩展层。 电流扩展层具有两个或更多个第一导电材料的子层，其中分布在子层之间的第二导电材料的图案化区域，用于扩散通过电极和半导体材料之间的电流。 第二种材料具有低于第一种材料的欧姆电阻。

公开(公告)号：US20080101062A1

公开(公告)日：2008-05-01

申请号：US11881039

申请日：2007-07-24

申请人： Jian Feng ,  Shengmei Zheng ,  Yong Cai ,  Hung-Shen Chu

发明人： Jian Feng ,  Shengmei Zheng ,  Yong Cai ,  Hung-Shen Chu

IPC分类号： F21V7/00 ,  F21V9/00

CPC分类号： H01L33/486 ,  F21K9/68 ,  F21V7/005 ,  H01L33/38 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light source for a lighting device has a reflector for receiving one or more light emitting diode devices. The reflector has reflective sides and a light exit. There is a side emitting LED device located in the reflector such that its primary light emitting direction towards the reflective sides such that light emitted from the LED device are reflected towards the light exit.

摘要翻译： 用于照明装置的光源具有用于接收一个或多个发光二极管装置的反射器。 反射器具有反射侧和光出口。 存在位于反射器中的侧发射LED器件，使得其朝向反射侧的主要发光方向使得从LED器件发射的光被朝向光出口反射。

公开(公告)号：US20080093607A1

公开(公告)日：2008-04-24

申请号：US11588719

申请日：2006-10-27

申请人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

发明人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

IPC分类号： H01L31/12

CPC分类号： H01L33/54 ,  H01L33/46 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light emitting diode device which, in use, has its light emitting region occupying a plane substantially perpendicular to a plane occupied by the surface on which the device is mounted. The primary light emission directions of the light emitting region are parallel to the surface on which the device is mounted. The device may have both its p-type and n-type semiconductor layers passivated by a layer or layers of light transmissive materials. There is a method for fabricating and mounting such a device. A plurality of the light emitting diode devices can be used in a lighting assembly for providing a plurality of independently controllable lit regions.

摘要翻译： 一种发光二极管器件，在使用中，其发光区域占据与被安装器件的表面占据的平面基本垂直的平面。 发光区域的主要发光方向平行于装置所在的表面。 该器件可以具有被一层或多层透光材料钝化的其p型和n型半导体层。 存在用于制造和安装这种装置的方法。 多个发光二极管器件可用于照明组件中，用于提供多个可独立控制的点亮区域。

公开(公告)号：US07847306B2

公开(公告)日：2010-12-07

申请号：US11588719

申请日：2006-10-27

申请人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

发明人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

IPC分类号： H01L27/15

CPC分类号： H01L33/54 ,  H01L33/46 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light emitting diode device which, in use, has its light emitting region occupying a plane substantially perpendicular to a plane occupied by the surface on which the device is mounted. The primary light emission directions of the light emitting region are parallel to the surface on which the device is mounted. The device may have both its p-type and n-type semiconductor layers passivated by a layer or layers of light transmissive materials. There is a method for fabricating and mounting such a device. A plurality of the light emitting diode devices can be used in a lighting assembly for providing a plurality of independently controllable lit regions.

摘要翻译： 一种发光二极管器件，在使用中，其发光区域占据与被安装器件的表面占据的平面基本垂直的平面。 发光区域的主要发光方向平行于装置所在的表面。 该器件可以具有被一层或多层透光材料钝化的其p型和n型半导体层。 存在用于制造和安装这种装置的方法。 多个发光二极管器件可用于照明组件中，用于提供多个可独立控制的点亮区域。

公开(公告)号：US20080129198A1

公开(公告)日：2008-06-05

申请号：US11607066

申请日：2006-12-01

申请人： Jian Feng ,  Hung-Shen Chu

发明人： Jian Feng ,  Hung-Shen Chu

IPC分类号： H01J1/62

CPC分类号： H01L27/15 ,  H01L33/02

摘要： An LED device includes a multi-layer stack of materials having a p-layer, an n-layer, and a p-n junction for emission of light. The LED device further includes a p-electrode and an n-electrode for electrical connection between the respective p-layer and n-layer with an AC power source, and a capacitor located between one of the p-layer and n-layer and its respective electrode.

摘要翻译： LED器件包括具有用于发光的p层，n层和p-n结的材料的多层堆叠。 LED装置还包括p电极和n电极，用于在各个p层和n层之间与AC电源电连接，以及位于p层和n层中的一个之间的电容器及其 各自的电极。

公开(公告)号：US07834373B2

公开(公告)日：2010-11-16

申请号：US11638638

申请日：2006-12-12

申请人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

发明人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

IPC分类号： H01L33/36

CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/38

摘要： A semiconductor device has a current spreading layer between a semiconductor material and an electrode for connecting the semiconductor material to an electrical power supply. The current spreading layer has two or more sub-layers of a first conductive material with patterned regions of a second conductive material distributed between the sub-layers for spreading an electrical current passing between the electrode and the semiconductor material. The second material has an ohmic resistance lower than the first material.

摘要翻译： 半导体器件在半导体材料和用于将半导体材料连接到电源的电极之间具有电流扩展层。 电流扩展层具有两个或更多个第一导电材料的子层，其中分布在子层之间的第二导电材料的图案化区域，用于扩散通过电极和半导体材料之间的电流。 第二种材料具有低于第一种材料的欧姆电阻。