公开(公告)号：US07800122B2

公开(公告)日：2010-09-21

申请号：US11516564

申请日：2006-09-07

申请人： Kuo An Chiu ,  Jian Feng ,  Huaijun Peng ,  Hung Shen Chu ,  Shengmei Zheng

发明人： Kuo An Chiu ,  Jian Feng ,  Huaijun Peng ,  Hung Shen Chu ,  Shengmei Zheng

IPC分类号： H01L33/10

CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L33/46 ,  H01L2933/0083

摘要： A light emitting diode device includes a multi-layer stack of materials including a p-layer, a n-layer, and a light generating region for emission of light in a primary emission direction towards one of the p- and n-layers; a substantially transparent layer located at or adjacent said one of the p- and n-layers, having a first surface facing said one of the p- and n-layers and an opposed second surface; and a reflective surface formed at or adjacent the second surface of the transparent layer for directing at least a portion of the emitted light in a direction away from the primary emission direction so as to enhance light emission from a side of the light emitting diode device.

摘要翻译： 发光二极管装置包括多层堆叠的材料，包括p层，n层和发光区域，用于沿主发射方向朝向p层和n层之一发射光; 位于或邻近所述p层和n层之一的基本上透明的层，具有面对所述p层和n层之一的第一表面和相对的第二表面; 以及形成在所述透明层的第二表面处或邻近所述透明层的第二表面的反射表面，用于沿远离所述主发射方向的方向引导所述发射光的至少一部分，以便增强从所述发光二极管器件的侧面的光发射。

公开(公告)号：US20080061306A1

公开(公告)日：2008-03-13

申请号：US11518912

申请日：2006-09-12

申请人： Kuo An Chiu ,  Yan Huang ,  Hung-Shen Chu

发明人： Kuo An Chiu ,  Yan Huang ,  Hung-Shen Chu

IPC分类号： H01L33/00

CPC分类号： H01L33/641 ,  H01L33/405 ,  H01L33/642 ,  H01L33/648

摘要： A semiconductor light emitting device includes a multi-layer stack of materials including a layer of p-doped material, a layer of n-doped material, and a light generating region therebetween; a first thermal conduction path between the light generating region and the exterior of the device; and a second thermal conduction path having a higher thermal conductivity than that of the first thermal conduction path. The second thermal conduction path is for providing enhanced thermal dissipation from the light generating region to the exterior.

摘要翻译： 半导体发光器件包括多层堆叠的材料，包括p掺杂材料层，n掺杂材料层和它们之间的发光区域; 在所述光产生区域和所述装置的外部之间的第一热传导路径; 以及具有比第一导热路径高的热导率的第二导热路径。 第二热传导路径用于从光产生区域向外部提供增强的散热。

公开(公告)号：US20080061310A1

公开(公告)日：2008-03-13

申请号：US11516564

申请日：2006-09-07

申请人： Kuo An Chiu ,  Jian Feng ,  Huaijun Peng ,  Hung-Shen Chu ,  Shengmei Zheng

发明人： Kuo An Chiu ,  Jian Feng ,  Huaijun Peng ,  Hung-Shen Chu ,  Shengmei Zheng

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L33/46 ,  H01L2933/0083

摘要： A light emitting diode device includes a multi-layer stack of materials including a p-layer, a n-layer, and a light generating region for emission of light in a primary emission direction towards one of the p- and n-layers; a substantially transparent layer located at or adjacent said one of the p- and n-layers, having a first surface facing said one of the p- and n-layers and an opposed second surface; and a reflective surface formed at or adjacent the second surface of the transparent layer for directing at least a portion of the emitted light in a direction away from the primary emission direction so as to enhance light emission from a side of the light emitting diode device.

摘要翻译： 发光二极管装置包括多层堆叠的材料，包括p层，n层和发光区域，用于沿主发射方向朝向p层和n层之一发射光; 位于或邻近所述p层和n层之一的基本上透明的层，具有面对所述p层和n层之一的第一表面和相对的第二表面; 以及形成在所述透明层的第二表面处或邻近所述透明层的第二表面的反射表面，用于沿远离所述主发射方向的方向引导所述发射光的至少一部分，以便增强从所述发光二极管器件的侧面的光发射。

公开(公告)号：US20080061304A1

公开(公告)日：2008-03-13

申请号：US11516632

申请日：2006-09-07

申请人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

发明人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/405 ,  H01L2933/0083

摘要： A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.

摘要翻译： 用于发射在主发射方向上具有预定带宽的光的半导体发光器件包括用于产生光的光产生区域; 以及具有覆盖所述带宽的至少一段的光子带隙的一维光子晶体结构。 一维光子晶体结构被定位成使得当来自发光区域的光入射时，具有在一维光子晶体结构的带隙内的波长的光在主要发射方向上被反射。

公开(公告)号：US07829905B2

公开(公告)日：2010-11-09

申请号：US11516632

申请日：2006-09-07

申请人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

发明人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

IPC分类号： H01L33/46

CPC分类号： H01L33/44 ,  H01L33/405 ,  H01L2933/0083

摘要： A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.

摘要翻译： 用于发射在主发射方向上具有预定带宽的光的半导体发光器件包括用于产生光的光产生区域; 以及具有覆盖所述带宽的至少一段的光子带隙的一维光子晶体结构。 一维光子晶体结构被定位成使得当来自发光区域的光入射时，具有在一维光子晶体结构的带隙内的波长的光在主要发射方向上被反射。