发明申请
- 专利标题: Semiconductor light emitting device
- 专利标题(中): 半导体发光器件
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申请号: US11516632申请日: 2006-09-07
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公开(公告)号: US20080061304A1公开(公告)日: 2008-03-13
- 发明人: Yan Huang , Kuo-An Chiu , Hua-Jun Peng , Jian Feng , Hung-Shen Chu
- 申请人: Yan Huang , Kuo-An Chiu , Hua-Jun Peng , Jian Feng , Hung-Shen Chu
- 申请人地址: HK New Territories
- 专利权人: Hong Kong Applied Science and Technology Research Institute Company Limited
- 当前专利权人: Hong Kong Applied Science and Technology Research Institute Company Limited
- 当前专利权人地址: HK New Territories
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.
公开/授权文献
- US07829905B2 Semiconductor light emitting device 公开/授权日:2010-11-09