Invention Application
US20080061856A1 Internal voltage generator of semiconductor integrated circuit 有权
半导体集成电路内部电压发生器

  • Patent Title: Internal voltage generator of semiconductor integrated circuit
  • Patent Title (中): 半导体集成电路内部电压发生器
  • Application No.: US11819424
    Application Date: 2007-06-27
  • Publication No.: US20080061856A1
    Publication Date: 2008-03-13
  • Inventor: Sang Jin Byeon
  • Applicant: Sang Jin Byeon
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Priority: KR10-2006-0088749 20060913
  • Main IPC: H03L5/00
  • IPC: H03L5/00 G05F1/10
Internal voltage generator of semiconductor integrated circuit
Abstract:
An internal voltage generator of a semiconductor integrated circuit includes a first driver that outputs an internal voltage by using an internal reference voltage during an active operation in accordance with a detection signal generated by using an external voltage and an active enable signal activated during an activation mode, and a second driver that outputs an internal voltage by using the internal reference voltage during the active operation in accordance with the active enable signal.
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