Invention Application
- Patent Title: Internal voltage generator of semiconductor integrated circuit
- Patent Title (中): 半导体集成电路内部电压发生器
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Application No.: US11819424Application Date: 2007-06-27
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Publication No.: US20080061856A1Publication Date: 2008-03-13
- Inventor: Sang Jin Byeon
- Applicant: Sang Jin Byeon
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Priority: KR10-2006-0088749 20060913
- Main IPC: H03L5/00
- IPC: H03L5/00 ; G05F1/10

Abstract:
An internal voltage generator of a semiconductor integrated circuit includes a first driver that outputs an internal voltage by using an internal reference voltage during an active operation in accordance with a detection signal generated by using an external voltage and an active enable signal activated during an activation mode, and a second driver that outputs an internal voltage by using the internal reference voltage during the active operation in accordance with the active enable signal.
Public/Granted literature
- US07724076B2 Internal voltage generator of semiconductor integrated circuit Public/Granted day:2010-05-25
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