Invention Application
- Patent Title: In-situ process state monitoring of chamber
- Patent Title (中): 室的原位过程状态监测
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Application No.: US11508524Application Date: 2006-08-23
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Publication No.: US20080063810A1Publication Date: 2008-03-13
- Inventor: Soonam Park , Qiwei Liang , Zhong Qiang , Dmitry Lubomirsky , Young S. Lee
- Applicant: Soonam Park , Qiwei Liang , Zhong Qiang , Dmitry Lubomirsky , Young S. Lee
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H05H1/24
- IPC: H05H1/24 ; C23C16/00

Abstract:
The process state of a chamber after a maintenance procedure can be monitored in-situ in order to ensure that the chamber is ready for processing, while minimizing waste and downtime due to aftereffects of the maintenance procedure. The composition of a bulk plasma in a process chamber can be analyzed using an analytical tool to capture the emission spectrum of the plasma. The spectrum can be analyzed to generate a model of the current chamber conditions, which can be compared to a model of ideal chamber conditions using a statistical analysis approach such as multivariate primary component analysis. If the current and ideal models match to within a set confidence level, the chamber conditions are acceptable for processing devices, and any processing of cycling workpieces or other plasma-cleansing processes can be stopped.
Information query
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