发明申请
- 专利标题: In-situ process state monitoring of chamber
- 专利标题(中): 室的原位过程状态监测
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申请号: US11508524申请日: 2006-08-23
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公开(公告)号: US20080063810A1公开(公告)日: 2008-03-13
- 发明人: Soonam Park , Qiwei Liang , Zhong Qiang , Dmitry Lubomirsky , Young S. Lee
- 申请人: Soonam Park , Qiwei Liang , Zhong Qiang , Dmitry Lubomirsky , Young S. Lee
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H05H1/24
- IPC分类号: H05H1/24 ; C23C16/00
摘要:
The process state of a chamber after a maintenance procedure can be monitored in-situ in order to ensure that the chamber is ready for processing, while minimizing waste and downtime due to aftereffects of the maintenance procedure. The composition of a bulk plasma in a process chamber can be analyzed using an analytical tool to capture the emission spectrum of the plasma. The spectrum can be analyzed to generate a model of the current chamber conditions, which can be compared to a model of ideal chamber conditions using a statistical analysis approach such as multivariate primary component analysis. If the current and ideal models match to within a set confidence level, the chamber conditions are acceptable for processing devices, and any processing of cycling workpieces or other plasma-cleansing processes can be stopped.
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