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    In-situ process state monitoring of chamber
    1.
    发明申请
    In-situ process state monitoring of chamber 审中-公开
    室的原位过程状态监测

    公开(公告)号：US20080063810A1

    公开(公告)日：2008-03-13

    申请号：US11508524

    申请日：2006-08-23

    申请人： Soonam Park ,  Qiwei Liang ,  Zhong Qiang ,  Dmitry Lubomirsky ,  Young S. Lee

    发明人： Soonam Park ,  Qiwei Liang ,  Zhong Qiang ,  Dmitry Lubomirsky ,  Young S. Lee

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： H01J37/32972 ,  C23C16/4401 ,  C23C16/52 ,  H01J37/32935

    摘要： The process state of a chamber after a maintenance procedure can be monitored in-situ in order to ensure that the chamber is ready for processing, while minimizing waste and downtime due to aftereffects of the maintenance procedure. The composition of a bulk plasma in a process chamber can be analyzed using an analytical tool to capture the emission spectrum of the plasma. The spectrum can be analyzed to generate a model of the current chamber conditions, which can be compared to a model of ideal chamber conditions using a statistical analysis approach such as multivariate primary component analysis. If the current and ideal models match to within a set confidence level, the chamber conditions are acceptable for processing devices, and any processing of cycling workpieces or other plasma-cleansing processes can be stopped.

    摘要翻译： 可以在现场监测维护程序之后的室的过程状态，以确保室准备好进行处理，同时将由于维护过程的后期影响引起的浪费和停机时间最小化。 可以使用分析工具来分析处理室中的体积等离子体的组成以捕获等离子体的发射光谱。 可以分析光谱以产生当前室条件的模型，其可以使用诸如多变量主成分分析的统计分析方法与理想室条件的模型进行比较。 如果当前和理想模型与设定的置信水平相匹配，则腔室条件对于加工设备是可接受的，并且可以停止循环工件或其他等离子体清洁过程的任何处理。

    FLOW CONTROL FEATURES OF CVD CHAMBERS
    3.
    发明申请
    FLOW CONTROL FEATURES OF CVD CHAMBERS 有权
    CVD气泡流量控制特征

    公开(公告)号：US20110011338A1

    公开(公告)日：2011-01-20

    申请号：US12836726

    申请日：2010-07-15

    申请人： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    发明人： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/85938

    摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

    摘要翻译： 提供了用于气体分配组件的装置和方法。 一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成 位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体 通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个 第三孔。

    PROCESS CHAMBER FOR DIELECTRIC GAPFILL
    6.
    发明申请
    PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
    电介质加工室

    公开(公告)号：US20070289534A1

    公开(公告)日：2007-12-20

    申请号：US11754858

    申请日：2007-05-29

    申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

    发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

    IPC分类号： C23C16/452

    CPC分类号： C23C16/46 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/67115

    摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

    摘要翻译： 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括辐射加热系统以加热包括至少一个光源的基板，其中从光源发射的至少一些光在到达基板之前穿过沉积室的顶侧。 该系统还可以包括将反应性基团前体和另外的电介质前体引入沉积室的前体分配系统。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

    PROCESS CHAMBER FOR DIELECTRIC GAPFILL
    7.
    发明申请
    PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
    电介质加工室

    公开(公告)号：US20070277734A1

    公开(公告)日：2007-12-06

    申请号：US11754916

    申请日：2007-05-29

    申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

    发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/402 ,  C23C16/45574 ,  C23C16/505

    摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

    摘要翻译： 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括前体分配系统，其包括位于衬底台上方的双通道喷头。 喷头可以具有面板，其具有第一组开口，反应性自由基前体通过该开口进入沉积室，以及第二组开口，第二介电体前体通过该开口进入沉积室。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。