Bipolar Device Having Improved Capacitance

Invention Application

US20080064177A1 Bipolar Device Having Improved Capacitance 有权

Title translation: 具有改善电容的双极器件

Please log in to see more content

Patent Title: Bipolar Device Having Improved Capacitance
Patent Title (中): 具有改善电容的双极器件
Application No.: US11531477

Application Date: 2006-09-13
Publication No.: US20080064177A1

Publication Date: 2008-03-13
Inventor: Alan S. Chen , Mark Dyson , Daniel C. Kerr , Nace M. Rossi
Applicant: Alan S. Chen , Mark Dyson , Daniel C. Kerr , Nace M. Rossi
Applicant Address: US PA Allentown
Assignee: Agere Systems Inc.
Current Assignee: Agere Systems Inc.
Current Assignee Address: US PA Allentown
Main IPC: H01L21/331
IPC: H01L21/331

Bipolar Device Having Improved Capacitance

Abstract:

The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector by at least about 0.9 microns. The invention also provides a method for forming this device.

Abstract(Chinese):

本发明在一个方面提供了一种半导体器件，其包括位于半导体衬底中的集电极和位于集电极下方的隔离区域，其中将隔离区域的峰值掺杂浓度与集电极的峰值掺杂浓度分开，至少约0.9微米。本发明还提供了一种用于形成该装置的方法。

Public/Granted literature

US07666750B2 Bipolar device having improved capacitance Public/Granted day:2010-02-23

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/328	....制造双极型器件，例如二极管、晶体管、晶闸管的台阶式工艺
H01L21/33	.....包括3个或更多电极的器件
H01L21/331	......晶体管