发明申请
US20080067444A1 Ion beam scanning control methods and systems for ion implantation uniformity
有权
离子束扫描控制方法和离子注入系统的均匀性
- 专利标题： Ion beam scanning control methods and systems for ion implantation uniformity
- 专利标题（中）： 离子束扫描控制方法和离子注入系统的均匀性
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申请号： US11784709申请日： 2007-04-09
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公开(公告)号： US20080067444A1公开(公告)日： 2008-03-20
- 发明人: Victor M. Benveniste , Edward C. Eisner , Bo H. Vanderberg
- 申请人： Victor M. Benveniste , Edward C. Eisner , Bo H. Vanderberg
- 专利权人： Axcelis Technologies, Inc.
- 当前专利权人： Axcelis Technologies, Inc.
- 主分类号： H01J37/08
- IPC分类号： H01J37/08
摘要：
One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.