公开(公告)号：US08963107B2

公开(公告)日：2015-02-24

申请号：US13348855

申请日：2012-01-12

申请人： Edward C. Eisner ,  Bo H. Vanderberg

发明人： Edward C. Eisner ,  Bo H. Vanderberg

IPC分类号： G01K5/00 ,  H01J37/147

CPC分类号： H01J37/147 ,  G01K5/00 ,  H01J37/05 ,  H01J37/16 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

摘要： Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants.

摘要翻译： 可以将用于减少能量污染的方法和装置提供给用于离子注入的束线组件。 包括其间的表面区域和凹槽的突起可以在来自光束线组件内的工件的视线范围内面对中性轨迹。 突起可以改变中性轨迹离开工件的过程，或者在撞击工件之前引起交替的轨迹以进一步冲击，从而进一步减少更敏感的植入物的能量污染。

公开(公告)号：US20120248324A1

公开(公告)日：2012-10-04

申请号：US13077329

申请日：2011-03-31

申请人： Edward C. Eisner

发明人： Edward C. Eisner

IPC分类号： H01J1/50 ,  G21K5/10 ,  H01J3/14

CPC分类号： H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

摘要： The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

摘要翻译： 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US08008636B2

公开(公告)日：2011-08-30

申请号：US12338644

申请日：2008-12-18

申请人： Edward C. Eisner

发明人： Edward C. Eisner

IPC分类号： H01J37/317 ,  H01J376/256 ,  H01J3/14

CPC分类号： H01J37/3171 ,  H01J2237/1538 ,  H01J2237/24542 ,  H01J2237/30472

摘要： Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece, or to improve the consistency of the ion implantation across the workpiece. Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece.

公开(公告)号：US07858955B2

公开(公告)日：2010-12-28

申请号：US12145713

申请日：2008-06-25

申请人： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

发明人： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

IPC分类号： H01J27/02 ,  H01J27/00

CPC分类号： H01J37/05 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/31703

摘要： An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

摘要翻译： 一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 ，并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分， 用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

公开(公告)号：US20080078957A1

公开(公告)日：2008-04-03

申请号：US11541087

申请日：2006-09-29

申请人： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

发明人： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

IPC分类号： H01J37/08

CPC分类号： H01J37/3233 ,  H01J37/08 ,  H01J37/304 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32935 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01L21/265

摘要： Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.

摘要翻译： 通过调整离子源的一个或多个参数，在离子注入期间调整光束电流。 离子束由非电弧放电型离子源（例如电子枪驱动离子源或RF驱动离子源）产生或提供。 确定射束电流调节量。 然后，根据确定的光束电流调节量来调整离子源的一个或多个参数。 提供具有调制束电流的束电流。

公开(公告)号：US20080078955A1

公开(公告)日：2008-04-03

申请号：US11540449

申请日：2006-09-29

申请人： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

发明人： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

IPC分类号： H01J37/317 ,  H01J37/302

CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/3045 ,  H01J2237/043 ,  H01J2237/082 ,  H01J2237/24535 ,  H01J2237/24564 ,  H01J2237/24578 ,  H01J2237/30455 ,  H01J2237/30472

摘要： An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.

摘要翻译： 在离子注入期间，在检测到光束不稳定性时，离子束被快速关闭。 离子束由非电弧放电型离子源（例如电子枪离子源或RF离子源）产生或提供。 离子束从起始位置朝向终止位置跨工件扫描。 在扫描期间，监视一个或多个光束特性，例如光束电流，光束通量，形状等。 当一个或多个光束特性偏离可接受的值或水平时，检测到不稳定性。 在检测到的不稳定性下，离子束快速关闭。

公开(公告)号：US20080067444A1

公开(公告)日：2008-03-20

申请号：US11784709

申请日：2007-04-09

申请人： Victor M. Benveniste ,  Edward C. Eisner ,  Bo H. Vanderberg

发明人： Victor M. Benveniste ,  Edward C. Eisner ,  Bo H. Vanderberg

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  G21K5/04 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31703

摘要： One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.

摘要翻译： 本发明的一个实施例涉及一种用于调整扫描离子束的带状光束通量的方法。 在该方法中，以扫描速率扫描离子束，并且当扫描离子束时测量多个动态光束分布。 基于扫描光束的多个测量的动态光束分布来计算校正的扫描速率。 以校正的扫描速率扫描离子束以产生校正的带状离子束。 还公开了其它方法和系统。

公开(公告)号：US20080067436A1

公开(公告)日：2008-03-20

申请号：US11523148

申请日：2006-09-19

申请人： Bo H. Vanderberg ,  Robert D. Rathmell ,  Edward C. Eisner

发明人： Bo H. Vanderberg ,  Robert D. Rathmell ,  Edward C. Eisner

IPC分类号： H01J37/08

CPC分类号： H01J37/026 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/055

摘要： A magnetic scanner employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece and a lower pole piece that generate an oscillatory time varying magnetic field across a path of an ion beam and deflect the ion beam in a scan direction. A set of entrance magnets are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam.

摘要翻译： 磁扫描仪采用恒定磁场来减轻零场效应。 该扫描器包括上极片和下极片，其在离子束的路径上产生振荡时变磁场并使扫描方向偏转离子束。 一组入口磁体围绕扫描器的入口定位，并且在离子束的路径上产生恒定的入射磁场。 一组出口磁体围绕扫描器的出口定位，并在离子束的路径上产生恒定的出射磁场。

公开(公告)号：US07227160B1

公开(公告)日：2007-06-05

申请号：US11520190

申请日：2006-09-13

申请人： Bo H. Vanderberg ,  Edward C. Eisner

发明人： Bo H. Vanderberg ,  Edward C. Eisner

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/1471 ,  H01J37/1472 ,  H01J2237/24528

摘要： An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.

摘要翻译： 离子注入系统采用质量分析仪进行质量分析和角度校正。 离子源沿着光束路径产生离子束。 质量分析仪位于离子源的下游，对离子束进行质量分析和角度校正。 孔组件内的分辨孔位于质量分析器部件的下游并且沿着光束路径。 分辨孔径根据所选质量分辨率和离子束的束包络具有尺寸和形状。 角度测量系统位于分辨孔径的下游，并获得离子束的入射角。 控制系统根据来自角度测量系统的离子束的入射角度，对质量分析器进行磁场调整。

公开(公告)号：US08637838B2

公开(公告)日：2014-01-28

申请号：US13324050

申请日：2011-12-13

申请人： Edward C. Eisner ,  Bo H. Vanderberg

发明人： Edward C. Eisner ,  Bo H. Vanderberg

IPC分类号： H01J37/147 ,  H01J37/317 ,  H01J37/08 ,  H01J49/26

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/15 ,  H01J2237/24405 ,  H01J2237/24514 ,  H01J2237/31703

摘要： A scanning system including a scanning element, a beam profiler, analysis system, and a ZFE-limiting element, is disclosed. The scanning element is configured to scan an ion beam over an ion beam scan path. The beam profiler measures beam current of the ion beam as it is scanned over the ion beam scan path, and the analysis system analyzes the measured beam current to detect a ZFE condition. The ZFE-limiting element, which is upstream of the beam profiler and is coupled to the analysis system via a feedback path, is configured to selectively apply an electric field to the scanned ion beam based on whether the ZFE condition is detected. The selectively applied electric field induces a change in the scanned beam to limit the ZFE condition.

摘要翻译： 公开了一种包括扫描元件，光束轮廓仪，分析系统和ZFE限制元件的扫描系统。 扫描元件被配置为在离子束扫描路径上扫描离子束。 光束轮廓仪在离子束扫描路径上扫描时测量离子束的束电流，分析系统分析测量的束电流以检测ZFE条件。 ZFE限制元件，其在光束轮廓仪的上游并且经由反馈路径耦合到分析系统，被配置为基于是否检测到ZFE条件来选择性地向扫描的离子束施加电场。 选择性施加的电场引起扫描光束的变化以限制ZFE条件。