发明申请
US20080073695A1 SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY
有权
半导体存储器和制造半导体存储器的方法
- 专利标题： SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY
- 专利标题（中）： 半导体存储器和制造半导体存储器的方法
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申请号： US11841257申请日： 2007-08-20
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公开(公告)号： US20080073695A1公开(公告)日： 2008-03-27
- 发明人: Makoto Mizukami , Riichiro Shirota , Fumitaka Arai
- 申请人： Makoto Mizukami , Riichiro Shirota , Fumitaka Arai
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-226741 20060823
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/84
摘要：
A semiconductor memory including a plurality of cell units arranged in a row direction, each of the cell units includes: a semiconductor region; a first buried insulating film provided on the semiconductor region; a second buried insulating film provided on the first buried insulating film, which has higher dielectric constant than the first buried insulating film; a semiconductor layer provided on the second buried insulating film; and a plurality of memory cell transistors arranged in a column direction, each of the memory cell transistors having a source region, a drain region and a channel region defined in the semiconductor layer.
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